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Edge capacitor, integrated circuit and manufacturing process for edge capacitor

A technology of integrated circuit and manufacturing process, applied in the field of fringe capacitors, to achieve the effect of increasing the complexity of the process

Pending Publication Date: 2022-07-19
TEXAS INSTR INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] Existing integrated circuits according to the prior art fail to provide integrated capacitors suitable for high voltages (eg 400V) while having a sufficiently high density (capacitance)

Method used

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  • Edge capacitor, integrated circuit and manufacturing process for edge capacitor
  • Edge capacitor, integrated circuit and manufacturing process for edge capacitor
  • Edge capacitor, integrated circuit and manufacturing process for edge capacitor

Examples

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Embodiment Construction

[0031] figure 1 is a simplified cross-sectional view of capacitor C according to the present disclosure. The capacitor is formed monolithically on a silicon substrate Si, which is covered by a gallium nitride GaN layer. The GaN layer may be further covered by a non-conductive layer. The non-conductive layer can be made of eg SiO 2 or SiON or any low-k or high-k dielectric or silicon nitride (Si 3 N 4 )production. The illustrated structure of capacitor C is also referred to as a fringe capacitor. The capacitor C comprises a first structure E1 (first electrode) made of a metal layer MET and a second structure E2 (second electrode) made of the same metal layer MET and between the first structure E1 and the second structure E2 The dielectric layer (also known as the protective layer PO). The dielectric layer / protective layer PO has a relative permittivity greater than that of silicon oxide. The dielectric constant of the dielectric / protective layer may be greater than 4 or...

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Abstract

The invention relates to a fringe capacitor, an integrated circuit and a manufacturing process for the fringe capacitor. The invention provides a capacitor (C) having a first structure (E1) made of a metal layer and a second structure (E2) made of the same metal layer and a dielectric layer (PO / SiN) between the first (E1) and second (E2) metal structures, the dielectric layer (PO / SiN) having a relative dielectric constant greater than 4, in particular greater than 6. Monolithic integrated circuits including such capacitors and optional other components are also provided. Methods of manufacturing such capacitors are also provided.

Description

technical field [0001] The present disclosure relates to fringe capacitors, integrated circuits, and fabrication processes for such capacitors. Background technique [0002] Existing integrated circuits according to the prior art fail to provide integrated capacitors suitable for high voltages (eg 400V) while having a sufficiently high density (capacitance). SUMMARY OF THE INVENTION [0003] It is an object of the present disclosure to provide capacitors, integrated circuits containing capacitors and manufacturing processes for such capacitors and integrated circuits suitable for high voltage applications while still providing sufficiently large capacitance values. [0004] In one aspect, there is a capacitor comprising a first structure made of a metal layer and a second structure made of the same metal layer and a dielectric / protective layer between the first and second metal structures. The dielectric / protective layer may have a relative permittivity greater than 4, es...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/64H01L27/06H10N97/00
CPCH01L28/40H01L28/60H01L27/0629H03K3/0377H01L23/5223H01L27/0605H01L21/8252H02M1/44H02M3/003H02M3/156H02M7/06H02M1/0029H02M1/0009H02M1/0058H02M1/32H01L29/2003H01L29/66462H01L29/7781
Inventor N·特珀尔内尼M·P·考夫曼M·吕德斯J·约翰
Owner TEXAS INSTR INC