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Method for preparing semiconductor structure, semiconductor structure and semiconductor device

A technology of semiconductor and epitaxial structure, applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, etc., can solve the problem of uneven distribution of insulators

Active Publication Date: 2022-07-22
度亘核芯光电技术(苏州)有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The first object of the present invention is to provide a method for preparing a semiconductor structure to alleviate the technical problem of uneven distribution of insulators after oxidation of the epitaxial structure existing in the prior art

Method used

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  • Method for preparing semiconductor structure, semiconductor structure and semiconductor device
  • Method for preparing semiconductor structure, semiconductor structure and semiconductor device
  • Method for preparing semiconductor structure, semiconductor structure and semiconductor device

Examples

Experimental program
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Embodiment 1

[0057] See figure 1 , and combine figure 2 , this embodiment provides a method for preparing a semiconductor structure, and the method for preparing a semiconductor structure includes:

[0058] S100, a crystal epitaxial structure 100 is obtained, for example, the crystal epitaxial structure 100 is obtained by etching. The crystalline epitaxial structure 100 includes an aluminum-containing epitaxial layer 200 and a confinement layer 300 disposed on the aluminum-containing epitaxial layer 200 .

[0059] S200 , a plurality of openings are formed on the confinement layer 300 , and the openings penetrate through the confinement layer 300 and are connected to the aluminum-containing epitaxial layer 200 . The diameter of the opening near the centerline of the aluminum-containing epitaxial layer 200 is larger than the diameter of the opening far from the centerline of the aluminum-containing epitaxial layer 200 .

[0060] S300, the crystal epitaxial structure 100 is placed in a we...

Embodiment 2

[0094] The second embodiment provides a semiconductor structure, and the semiconductor structure is obtained by using the method for fabricating a semiconductor structure in the first embodiment. The technical features of the method for fabricating the semiconductor structure disclosed in the first embodiment are also applicable to this embodiment, and the first embodiment has been disclosed The technical features of the method for preparing the semiconductor structure are not described repeatedly. The embodiments of the semiconductor structure will be further described in detail below with reference to the accompanying drawings.

[0095] See figure 2 The semiconductor structure provided in this embodiment includes a crystalline epitaxial structure 100 . The crystalline epitaxial structure 100 includes an aluminum-containing epitaxial layer 200 and a confinement layer 300 disposed on the aluminum-containing epitaxial layer 200 . The center of the aluminum-containing epitaxial...

Embodiment 3

[0100] The third embodiment provides a semiconductor device. The semiconductor device includes the semiconductor structure of the second embodiment. The technical features of the semiconductor structure disclosed in the second embodiment are also applicable to this embodiment. The technical features of the semiconductor structure disclosed in the second embodiment are different. The description is repeated.

[0101] The semiconductor device provided in this embodiment includes a plurality of semiconductor structures, which further alleviates the technical problem of uneven distribution of insulators in the prior art after the epitaxial structure is oxidized.

[0102] The semiconductor device of this embodiment has the advantages of the semiconductor structure of the second embodiment, which have been described in detail in the first embodiment and will not be repeated here.

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Abstract

The invention relates to the technical field of semiconductors, in particular to a method for preparing a semiconductor structure, the semiconductor structure and a semiconductor device. The method for preparing the semiconductor structure comprises the steps that S100, a crystal epitaxial structure is obtained, wherein the crystal epitaxial structure comprises an aluminum-containing epitaxial layer and a limiting layer arranged on the aluminum-containing epitaxial layer; s200, forming a plurality of openings in the limiting layer; the aperture of the opening close to the center line of the aluminum-containing epitaxial layer is greater than that of the opening far away from the center line of the aluminum-containing epitaxial layer; and S300, placing the crystal epitaxial structure into a wet oxidation device, so that oxidation dielectric layers are formed on two sides of the aluminum-containing epitaxial layer, and a current channel is formed in the center of the aluminum-containing epitaxial layer. The semiconductor structure is prepared by using a method for preparing the semiconductor structure. The semiconductor device includes a semiconductor structure. According to the method for preparing the semiconductor structure, the semiconductor structure and the semiconductor device, the technical problem of non-uniform distribution of insulators after an epitaxial structure is oxidized in the prior art is solved.

Description

technical field [0001] The present invention relates to the technical field of semiconductors, and in particular, to a method for preparing a semiconductor structure, a semiconductor structure and a semiconductor device. Background technique [0002] A semiconductor device is an electronic device whose conductivity is between a good conductor and an insulator, and uses the special electrical properties of semiconductor materials to complete specific functions. It can be used to generate, control, receive, transform, amplify signals and perform energy conversion. The semiconductor device includes an epitaxial structure including an aluminum-containing epitaxial layer. The aluminum-containing epitaxial layer can be oxidized by a wet oxidation process to form an oxide structure as an insulator and form a current channel to suppress the diffusion of operating current in the semiconductor device. [0003] The wet oxidation process is as follows. In an oxidizing environment such ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/316H01L21/768H01L23/532
CPCH01L21/02178H01L21/0223H01L23/5329H01L21/76856
Inventor 杨国文惠利省
Owner 度亘核芯光电技术(苏州)有限公司