Method for improving integrating degree of surface oxide layer and application

A technology of oxide layer and fit, which is applied in the field of solar cells, can solve the problems of low fit between oxide layer and silicon base layer, affecting the chemical performance and anti-induction performance of solar cells, so as to increase fit, reduce surface recombination, The effect of improving efficiency

Active Publication Date: 2022-07-29
HENGDIAN GRP DMEGC MAGNETICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The solar cell prepared by the above scheme has the problem of low fit between the oxide layer and the silicon base layer, which seriously affects the oxidation performance and anti-induction force performance of the solar cell. Therefore, to develop a method that can improve the fit of the surface oxide layer is very necessary

Method used

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  • Method for improving integrating degree of surface oxide layer and application
  • Method for improving integrating degree of surface oxide layer and application
  • Method for improving integrating degree of surface oxide layer and application

Examples

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Comparison scheme
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Embodiment 1

[0053] The present embodiment provides a method for improving the degree of fit of the surface oxide layer, and the process of the method is as follows:

[0054](1) Entering the boat: the temperature is 1000℃, the nitrogen flow is 15000sccm, the pressure is 1060Pa, and the time is 700s;

[0055] (2) Heating up: the temperature is 900°C, the nitrogen flow is 15000sccm, the pressure is 1060Pa, and the time is 500s;

[0056] (3) Vacuuming: the temperature is 900°C, the pressure is 0Pa, and the time is 200s;

[0057] (4) Catalytic purification: temperature 900℃, pressure 300Pa, dichloroethane 500sccm, dichlorosilane 1000sccm, nitrous oxide 2000sccm, time 1200s;

[0058] (5) Vacuuming: the temperature is 900°C, the pressure is 0Pa, and the time is 200s;

[0059] (6) Back pressure: the temperature is 900℃, the nitrogen flow is 15000sccm, the pressure is 1060Pa, and the time is 90s;

[0060] (7) Cooling and leaving the boat: 600°C, nitrogen flow for 15000sccm, pressure 1060Pa, tim...

Embodiment 2

[0062] This embodiment provides a method for improving the degree of fit of the surface oxide layer, and the process of the method is as follows:

[0063] (1) Entering the boat: the temperature is 1000℃, the nitrogen flow is 15000sccm, the pressure is 1060Pa, and the time is 700s;

[0064] (2) Heating up: the temperature is 900°C, the nitrogen flow is 15000sccm, the pressure is 1060Pa, and the time is 500s;

[0065] (3) Vacuuming: the temperature is 900°C, the pressure is 0Pa, and the time is 200s;

[0066] (4) Catalytic purification: temperature 900 ℃, pressure 300Pa, dichloroethane 1000sccm, dichlorosilane 1000sccm, nitrous oxide 2000sccm, time 1200s;

[0067] (5) Vacuuming: the temperature is 900°C, the pressure is 0Pa, and the time is 200s;

[0068] (6) Back pressure: the temperature is 900℃, the nitrogen flow is 15000sccm, the pressure is 1060Pa, and the time is 90s;

[0069] (7) Cooling and leaving the boat: 600°C, nitrogen flow for 15000sccm, pressure 1060Pa, time 80...

Embodiment 3

[0071] The difference between this example and Example 1 is only that the ventilation rate of dichloroethane in the catalytic purification described in step (4) is 2000sccm, and other conditions and parameters are exactly the same as those of Example 1.

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Abstract

The invention provides a method for improving the integrating degree of a surface oxide layer and application. The method comprises the following steps: sequentially carrying out boat entering, heating, one-step vacuum pumping, catalytic purification, two-step vacuum pumping, pressure returning and cooling boat exiting on an annealed solar cell silicon wafer, wherein the boat entering, the heating, the one-step vacuum pumping, the catalytic purification, the two-step vacuum pumping, the pressure returning and the cooling boat exiting are carried out on the annealed solar cell silicon wafer; wherein the atmosphere for catalytic purification comprises chlorinated alkane, chlorosilane and laughing gas, the chlorine-containing medium is adopted, impurities on the joint face of the oxide layer are subjected to catalytic purification in the high-temperature and low-pressure atmosphere, the surface recombination degree is reduced, the integrating degree of the oxide layer is increased, and therefore efficiency is improved, PID is improved, and the like.

Description

technical field [0001] The invention belongs to the technical field of solar cells, and relates to a method and application for improving the fit degree of a surface oxide layer. Background technique [0002] The light-receiving area of ​​the front side of a solar cell is an important factor affecting its photoelectric conversion efficiency. However, the front side of a conventional solar cell is shielded by a grid line structure, which will lead to current loss, thereby reducing the photoelectric conversion efficiency. [0003] In addition, for crystalline silicon solar cells, the recombination of electron-hole pairs inside the cell determines the photoelectric conversion efficiency of the solar cell. However, the diffusion layer formed by conventional diffusion has problems such as high recombination rate of electron-hole pairs, which has always restricted solar energy. One of the important factors of battery efficiency. At present, the efficiency advantage of single crys...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/0216
CPCH01L31/1868H01L31/1804H01L31/02167Y02P70/50
Inventor 郑正明周永安何悦任勇陈德爽
Owner HENGDIAN GRP DMEGC MAGNETICS CO LTD
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