Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Graphite film surface etching method

A surface etching and graphite film technology, applied in the direction of graphite, can solve the problems of cumbersome post-processing, difficult to apply on a large scale, and achieve the effect of improving surface roughness, improving bonding force and broad application prospects.

Pending Publication Date: 2022-08-02
BEIJING UNIV OF CHEM TECH
View PDF1 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the above-mentioned surface treatment methods often require the use of dangerous oxidizing agents or have certain requirements for equipment, and the post-treatment is relatively cumbersome, making it difficult to obtain large-scale applications.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Graphite film surface etching method
  • Graphite film surface etching method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] (1) Cut an artificial high thermal conductivity graphite film with a thickness of 70 μm into a size of 150*100 mm and place it in anhydrous ethanol to ultrasonically remove the adsorbed impurities on the surface of the graphite film, then use deionized water to wash off the ethanol on the surface of the graphite film Dry in a vacuum oven at 80°C.

[0025] (2) The graphite film is placed in a tube furnace, and the nitrogen-oxygen mixed gas (oxygen volume fraction is 21%) flows through the tube furnace, and the temperature is 650°C.

[0026] (3) The graphite film was kept in an atmosphere of 650° C. for 90 minutes, and then the heating was stopped, and the graphite film was taken out immediately, and then the graphite film was stored in a dry environment at room temperature. In this example, the surface of the graphite film obtained generally has six-membered annular pits and long grooves with a diameter of 500-800 nm, and a depth of 50-80 nm.

Embodiment 2

[0028] The etching time in the high temperature atmosphere was reduced to 30 min, and other conditions were the same as in Example 1. The surface of the obtained graphite film generally had six-membered annular pits and long grooves with a diameter of 200-400 nm and a depth of 10-30 nm.

Embodiment 3

[0030] The high-temperature atmosphere etching time was extended to 150min, and other conditions were the same as those in Example 1. The surface of the obtained graphite film generally had six-membered annular pits and long grooves with a diameter of 1000-1500nm and a depth of 100-120nm.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
diameteraaaaaaaaaa
diameteraaaaaaaaaa
Login to View More

Abstract

The invention relates to a graphite film surface etching method, and belongs to the technical field of graphite surface treatment. According to the method, the graphite film is placed in a high-temperature atmosphere for surface etching, micron-level six-membered annular pits and disordered long-strip-shaped grooves can be prepared in the surface of the graphite film, the surface roughness of the graphite film is increased, and the binding force between the graphite film and other base materials is effectively improved. The graphite film subjected to surface treatment is compounded with other materials, so that the heat conduction performance, the mechanical performance and the like of the composite material can be improved. Compared with other graphite film surface treatment methods, the method has the advantages that dangerous chemicals are not needed, the requirement for equipment is low, and the method is safe, convenient and suitable for large-scale application.

Description

technical field [0001] The invention relates to the technical field of graphite surface treatment, and specifically designs a graphite film surface etching method. Background technique [0002] In the past few decades, aerospace vehicles have been developing towards miniaturization, light weight and integration. Electronic devices are used more and more in aircraft. If the heat generated by these devices during operation cannot be effectively channeled, the normal use of aircraft or related devices will be affected. Therefore, heat dissipation has become a key issue to be solved urgently. As a traditional material, metal materials are often used for heat dissipation of equipment, such as copper tube heat dissipation components in personal computers. But for aerospace equipment, metallic materials with excessive density and mass are not the best choice. Because composite materials have many advantages such as low density, high strength, and designable performance, they have...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C01B32/21
CPCC01B32/21
Inventor 马兆昆孟泰生
Owner BEIJING UNIV OF CHEM TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products