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Cadmium and iron compound oxide air-sensitive semiconductor materials and air-sensitive element

A composite oxide and semiconductor technology, applied in the direction of material resistance, etc., can solve the problems of no interfering gas selectivity, no response-recovery characteristics, no stability, etc., to achieve high sensitivity, wide sensitivity, and wide working range. Effect

Inactive Publication Date: 2004-06-16
UNIV OF SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The above two patents did not describe the selectivity for other interfering gases, let alone their stability, nor did they describe their response-recovery characteristics, and these indicators are useful for detecting low concentrations of C in transformer cooling oil. 2 h 2 Especially important for gases

Method used

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  • Cadmium and iron compound oxide air-sensitive semiconductor materials and air-sensitive element
  • Cadmium and iron compound oxide air-sensitive semiconductor materials and air-sensitive element

Examples

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Embodiment 1

[0023] Cadmium salt and iron salt are used as raw materials (Cd / Fe=1.0 / 2.0), dissolve them to form a mixed solution, add lye to adjust the pH value to make it co-precipitate, wash, filter, dry, and burn at 600°C for 2 hours A gas-sensitive material is formed. The gas-sensitive material is added to the binder and fully ground to make a slurry coated on a small Al with internal heating wire, gold electrode and rhodium-platinum lead. 2 o 3 on the ceramic tube. Keep warm at an appropriate temperature (such as 300°C for 1 hour, 600°C for 2 hours or more), then fire it into a thick film type side-heated gas sensor and age it for a week.

[0024] Measure its performance. Accompanying drawing 1 is the sensitivity and temperature relation graph of gas sensor. As can be seen from accompanying drawing 1, gas sensor of the present invention is to 5ppmC 2 h 2 Gas sensitivity is as high as 20 times at around 270°C, while 3000ppmH 2 , CO and 300ppm C 2 h 4 are not more than 5 times,...

Embodiment 2

[0028] The operating procedure is as in Example 1, and Cd / Fe=1.0 / 2.5 is taken. Although the sensitivity of the gas sensor decreases slightly, the working temperature (280°C) that reaches the highest sensitivity decreases significantly (320°C when Cd / Fe=1.0 / 2.0 )

Embodiment 3

[0030] Operating procedure is according to embodiment 1, gets Cd / Fe=1.0 / 1.0, and the sensitivity of element has significantly improved to ethanol, reaches the temperature of highest sensitivity to descend to some extent, reaches 100 (when Cd / Fe=1.0 / 2.0 in the time of 300 ℃, S=70 at 320°C).

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Abstract

The invention provides an air-sensitive semiconductor material made of compound cadimium-iron oxides of which cadimium to iron mole ratio is 0.25-1, as well as air-sensitive component. Said material can be used as air-sensitive component directly or as air-sensitive matrix material to be modified by different addition to make air-sensitive components. This invention products have high sensitivity for ethyne and alcohol etc, wide working range for keeping sensitivity, better selectivity, rapid response and resume function and better stability. It is suited to leakage detection of enthyne and alcohol etc,particularly for on line detection of low concn. ethyne in transformer insulating oil.

Description

Technical field: [0001] The invention relates to a gas-sensitive semiconductor material and a gas-sensitive element made of the gas-sensitive semiconductor material. Background technique: [0002] Various gas-sensitive semiconductor materials in the past, such as SnO 2 system, ZnO system, Fe 2 o 3 ZnSnO and its composite oxide 3 , Zn 2 SnO 4 , ZnFe 2 o 4 And other materials, there are more or less some problems, some have poor selectivity, some have high resistance, and some must be doped and modified to have a certain gas-sensing effect. In addition, the gas sensor made by doping and modifying these materials still has the problem of long-term stability, and the working range is also relatively small. [0003] US Patent US 4581204 "Thin Film Gas Sensor" provides a C 2 h 2 Gas sensor for gas detection. It is made by high frequency sputtering on LiNbO 3 Single substrate production WO 3 Sensitive layer, monitor the concentration of acetylene in the range of 10 3 ...

Claims

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Application Information

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IPC IPC(8): G01N27/12
Inventor 刘杏芹徐正良沈瑜生
Owner UNIV OF SCI & TECH OF CHINA