Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Heating method for preparing metal substrate film

A metal substrate and heating method technology, which is applied in metal material coating technology, ion implantation plating, gaseous chemical plating, etc., can solve problems such as uneven heating, and achieve a wide heating range, simple operation, and easy processing Effect

Inactive Publication Date: 2004-07-07
INST OF PHYSICS - CHINESE ACAD OF SCI
View PDF2 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The object of the present invention is to overcome the above-mentioned shortcoming of uneven heating of the prior art, and provide a kind of heating method for preparing metal substrate film

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Heating method for preparing metal substrate film
  • Heating method for preparing metal substrate film
  • Heating method for preparing metal substrate film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0014] Example 1: A 20 cm long nickel-based tape yttrium barium copper oxide (YBCO) superconducting tape was prepared.

[0015] The invention consists of figure 1 base in and figure 2 The auxiliary circuits in it are composed together. The two ends of a 20 cm long and 1 cm wide double-textured nickel-based tape were wrapped with silver foil and sandwiched between two copper plate electrodes. The copper plate electrodes were fixed on the steel base of the PLD equipment growth chamber through insulating ceramics. according to figure 2 Connect the circuit, evacuate the vacuum chamber to about 20Pa, and then calibrate the temperature controller through the infrared thermometer. By controlling the magnitude of the current to stabilize the temperature of the substrate at 700°C, a layer of 500nm YSZ is grown by laser deposition technology, and then the substrate is heated to 870°C, and YBCO is deposited by laser for 40 minutes to obtain a superconducting layer with a thickness of...

Embodiment 2

[0016] Embodiment 2: grow YBCO superconducting thin film on long silver tape substrate

[0017] The invention consists of figure 1 base in and figure 2 The auxiliary circuits in it are composed together. The two ends of the textured silver-based strip are respectively sandwiched between two copper plate electrodes, and the copper plate electrodes are fixed on the growth chamber base of the PLD device through insulating ceramics. The preparation process is as above, and a high-quality superconducting thin film is obtained.

Embodiment 3

[0018] Example 3: An MgO isolation layer was grown on a nickel-based strip with a length of 20 cm and a width of 5 cm.

[0019] The invention consists of figure 1 base in and figure 2 The auxiliary circuits in it are composed together. Both ends of the nickel-based tape are wrapped with silver foil, which are respectively sandwiched between two copper plate electrodes, and the copper plate electrodes are fixed on the base of the evaporation equipment through insulating ceramics. according to figure 2 Connect the circuit and evacuate the vacuum chamber to 1Pa. Also use the infrared thermometer to calibrate the temperature controller. At room temperature, metal Mg is evaporated for 10 minutes, then oxygenated to 10Pa, the nickel strip is heated to 380°C for 30 minutes, and then heated to 660°C for 20°C oxidation. The surface of the obtained MgO isolation layer is uniform, smooth and dense.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention relates to the preparation of film, especially film on the substrate of belt metal material. The present invention makes current flow through the metal substrate directly for heating, the film prepared in the said method has excellent performance and high homogeneity. The present invention has the advantages of easy use, easy processing, low cost, high temperature homogeneity, wide heating width, simple operation and good repeatability.

Description

technical field [0001] The invention relates to the field of thin film preparation, and is mainly applied to the preparation of strip-shaped thin films with metal materials as substrates. Background technique [0002] In the preparation of the thin film, in order to obtain a good thin film structure, the substrate of the thin film should be heated. The current common heating method is to use single crystal silicon heater, hot wire heater and iodine tungsten lamp heater, then place the substrate near the heater, and bake the substrate through the heating of the heater to achieve the purpose of heating the substrate . Using a silicon heater, when the substrate is small, the heating is more uniform. When the size of the substrate becomes longer, on the one hand, it is very difficult to prepare a long silicon heater due to the brittleness of silicon, and on the other hand, because the metal substrate is relatively soft. , it is difficult to be flat when the size is long, which...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/24C23C16/00C23C16/46
Inventor 许加迪何萌王淑芳周岳亮吕惠宾崔大复陈正豪
Owner INST OF PHYSICS - CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com