Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Picture composition method, device, template and method for making same

A stencil and patterning technology, used in printing devices, printed circuit manufacturing, semiconductor/solid-state device manufacturing, etc., can solve problems such as the inability to form larger patterns

Inactive Publication Date: 2004-08-11
SEIKO EPSON CORP
View PDF1 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, since the liquid flows by capillary action in the above-mentioned MIMIC method, the distance that the liquid can be supplied from the template side is very limited, and the resulting problem is that this method cannot use a wider template to form larger graphics

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Picture composition method, device, template and method for making same
  • Picture composition method, device, template and method for making same
  • Picture composition method, device, template and method for making same

Examples

Experimental program
Comparison scheme
Effect test

no. 1 example

[0052] First, a method of forming a black matrix (masked pattern) used in a member such as a color filter or the like for a liquid crystal panel using a concave template as a first embodiment of the present invention will be described.

[0053] figure 1 Shown is a plan view of the graphic transfer surface of the stencil used in the present invention. figure 2 shown along figure 1 The cross-sectional view of the straight line A-A (section) in is used to illustrate the structure of this template.

[0054] like figure 1 and 2 As shown, the template 1 of the present embodiment has a pattern transfer surface ( figure 2 The structure of the concave part in the bottom). Formed in the pattern transfer area 10 through the rear surface of the original template 100 ( figure 2 A plurality of through holes 12 at the top). The inner wall of the through hole 12 is preferably polished or treated so as to exhibit non-affinity to liquid. If it is treated to have non-affinity, when no...

no. 2 example

[0087] Next, a method for forming a black matrix (masked pattern) used in a color filter of a liquid crystal panel or the like using a convex template as a second embodiment of the present invention will be described.

[0088] Figure 8 Shown is a plan view of the pattern transfer surface of the stencil used in this example. Figure 9 shown along Figure 8 A cross-sectional view of A-A (section) in , used to illustrate the template structure.

[0089] like Figure 8 and 9 As shown, the template 1b of this embodiment has an upwardly convex pattern transfer area 10b on the pattern transfer surface of the substrate template 100. in other words, Figure 8 The planar structure of the graphic transfer surface shown in figure 1 The structure shown is the same, but the graphic transfer area 10b corresponds to the raised portion of the template.

[0090] A plurality of through holes 12b passing through the rear surface of the substrate template 100 are formed in the pattern tran...

no. 3 example

[0096] Next, a patterning apparatus capable of forming a desired pattern using an ink jet recording head will be described as a third embodiment of the present invention.

[0097] Figure 11 Shown is the configuration of the patterning device of this embodiment. like Figure 11 As shown, the patterning device 200b of this embodiment includes a template 1, an inkjet recording head 2b, a template delivery mechanism 4b, a control device 5b, a liquid storage mechanism 6b and an ejection head delivery mechanism 7.

[0098] Template 1 used in the first embodiment (see figure 1 and 2 ) can be used as it is as the template 1 in this embodiment, which can also use the template 1b used in the second embodiment. Since this embodiment particularly has a configuration in which a desired pattern can be formed by moving the ink jet recording head, the template can have a grid pattern or a uniform pattern composed of evenly spaced dots. According to a certain specification, the graphic t...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A template 1 is brought close to or in contact with a surface to be patterned 111 and patterns are formed with liquid 62 on the surface 111. This method comprises the steps of: bringing the template 1 close to or essentially in contact with the surface 111, supplying liquid 62 to a plurality of through holes 12 established in the pattern transfer region 10 of the template 1 for supplying the liquid, and separating the template 1 from the surface 111 after the liquid 62 is adhered to the surface 111 via the through holes 12.

Description

technical field [0001] The present invention relates generally to patterning techniques for semiconductor integrated circuits and the like, and more particularly to a novel patterning method using a stencil and an inkjet system. Background technique [0002] Photolithography is a method often used when processing integrated circuits and the like on silicon substrates or glass substrates. In order to use photolithography to form patterns, a thin coating of photosensitive material called photoresist is coated on the silicon wafer, and then printed (transferred) Integrated circuit pattern prepared on dry template. Using the transferred photoresist pattern as a mask, the material under the photoresist is etched away to form patterns and various elements. This photolithography method requires various processes such as paste coating, exposure and development, which makes it impossible to process fine patterns outside of semiconductor manufacturing plants or the like with large e...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): B41F17/14B41J2/01B41M1/12G02F1/1335G02F1/1343G03F7/34H01L21/30H01L21/311H01L21/3213H05K3/10H05K3/12
CPCH01L21/32139H05K3/1233H01L21/31144H05K2203/0134Y10T29/42H01L21/027B41J2/01B44C1/22
Inventor 根桥聪西川尚南下田达也
Owner SEIKO EPSON CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com