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Heterojunction field effect transistor

A heterojunction field effect, transistor technology, applied in transistors, semiconductor devices, electrical components, etc., can solve the problems of reduced current magnification, short life, and deterioration of transistor characteristics.

Inactive Publication Date: 2005-06-08
PANASONIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Figure 11(a) shows that if the recombination lifetime is small, it does not have much effect on the collector current, but the recombination current due to the base current is very large, causing n-value degradation
Moreover, Fig. 11(b) shows that if the recombination lifetime is small, the current amplification factor β is greatly reduced due to the increase in the recombination current of the base current as described above.
Therefore, the recombination life is short, which causes deterioration of transistor characteristics.

Method used

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Experimental program
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Effect test

no. 1 Embodiment

[0060] 3(a) and (b) show the C and Ge contents of the first base region and the second base region and the concentration of impurity boron (B) in the first embodiment, and the emitter region when a voltage is applied. - Energy band diagram of base region-collector region. In addition, illustration of the concentration of n-type impurities is omitted in FIG. 3( a ).

[0061] As shown in FIG. 3( a ), in this embodiment, the Ge content rate is set to a constant value (for example, 26.8%) throughout the first base region 12 and the second base region 13 . On the other hand, the content of C was 0.91% in the first base region 12 and 0.35% in the second base region 13 . That is, the first base region 12 is made of SiGe 0.268 C 0.0091 layers, the second base region 13 is made of SiGe 0.268 C 0.0035 layer composition.

[0062] At this time, SiGe 0.268 C 0.0091 The bandgap of the layer is about 0.95eV, SiGe 0.268 C 0.0035 The bandgap of the layer is about 0.92eV. Therefore, ...

no. 2 Embodiment

[0068] 4(a) and (b) show the C and Ge contents of the first base region and the second base region and the concentration of impurity boron (B) in the second embodiment, and the emitter region when a voltage is applied. - Energy band diagram of base region-collector region. In addition, illustration of the concentration of n-type impurities is omitted in FIG. 4( a ).

[0069] The present embodiment is characterized in that the band gaps of the two regions 12 and 13 are made equal by adjusting the Ge and C contents in the first base region 12 and the second base region 13 . Therefore, the Ge content rate is not set to the same value in the first and second base regions, but the Ge content rate in the first base region 12 is set higher than the Ge content rate in the second base region 13 That's it. When the composition in the SiGeC layer is represented by the general formula Si 1-x-y Ge x C y When the difference in the C content of the first base region 12 and the second ba...

no. 3 Embodiment

[0076] 5(a) and (b) show the C and Ge contents of the first base region and the second base region and the concentration of impurity boron (B) in the third embodiment, and the emitter region when a voltage is applied. Energy band diagram of a base region and a collector region. In addition, illustration of the concentration of n-type impurities is omitted in FIG. 5( a ).

[0077] In this embodiment, it is characterized in that by adjusting the content ratios of Ge and C in the first base region 12 and the second base region 13, the boundary between the first base region 12 and the second base region 13 is made The band gaps of the two are equal, so that the band gap of the first base region 12 changes toward the direction of accelerating base transition electrons. For this reason, when the composition in the SiGeC layer is represented by the general formula Si 1-x-y Ge x C y Indicates that when the difference in C content between the end of the first base region 12 on the ...

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Abstract

Provided is a heterojunction field effect transistor capable of suppressing a decrease in recombination current between an emitter and a base and improving current amplification factor while achieving lower driving voltage. On the Si substrate 10, a Si collector buried layer 11, a first base region 12 composed of a SiGeC layer with a high C content, a second base region 13 composed of a SiGeC layer or a SiGe layer with a low C content, and Si void layer 14 comprising emitter region 14a. At least the end portion of the second base region on the side of the emitter region has a C content of less than 0.8%. Therefore, in the depletion layer of the emitter-base junction, the formation of recombination centers caused by C can be suppressed, low driving voltage can be maintained, and electrical characteristics such as current amplification can be improved by reducing the recombination current. .

Description

technical field [0001] The present invention relates to a heterojunction field effect transistor using a semiconductor layer including silicon, and more particularly to a measure for lowering the drive voltage. Background technique [0002] In the past, as a high-performance device, the composition of the emitter region and the base region was changed in order to make the bandgap of the emitter region larger than that of the base region, thereby greatly improving the injection efficiency of the emitter, thereby improving the transistor characteristics. Heterojunction Field Effect Transistors (hereinafter referred to as HBTs) have attracted much attention. Such HBTs are increasingly being used as devices in the microwave and millimeter wave frequency domains, especially because of their excellent high-frequency characteristics. In the past, HBTs were mostly made of a combination of GaAs and AlGaAs, which are group III-V compound semiconductors. However, in recent years, the ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/737
CPCH01L29/7378H01L29/737
Inventor 丰田健治幸康一郎高木刚大西照人久保实
Owner PANASONIC CORP
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