Low-permittivity material and processing method via CVD

Abstract

The present invention discloses an organofluorosilicate glass film comprising organic and inorganic matter and not including appreciable amounts of fluorocarbons. A preferred thin film is represented by the formula: Si v o w C x h y f z , where v+w+x+y+z=100%, v from 10-35 atomic%, w from 10-65 atomic%, y from 10-50 atomic%, x from 1-30 atomic%, z from 0.1-15 at%, x / z optionally greater than 0.25, wherein substantially no fluorine is attached to carbon. In addition, the present invention also provides a CVD method, comprising: (a) providing a substrate in a vacuum chamber; (b) introducing a gas-phase reactant into the vacuum chamber, the reactant comprising fluorine-supplying gas, oxygen-supplying gas, and at least a precursor gas selected from organosilanes and organosiloxanes; and (c) applying energy to gas phase reactants in the chamber to cause the gas phase reactants to react and form a film on the substrate.

Description

Background technique

[0001] In the electronics industry, dielectric materials are used as insulating layers between circuits and components of integrated circuits and corresponding electronic devices. In order to increase the speed and storage capacity of microelectronic devices such as computer chips, linear dimensions are increasingly being reduced. Even in the past decade, microchip dimensions have decreased significantly, so that line widths previously greater than 1 micron were reduced to 0.18 microns, with future plans for drawing boards at least as low as 0.07 microns. Time delayed expression T=1 / 2RCL 2 It is often used to express: the result of size and material changes during signal propagation in a circuit, where T is the delay time, R is the resistance of the wire, C is the capacitance of the dielectric layer, and L is the length of the wire. Capacitance can be expressed as C=Kοk(S / d), where Kο is the vacuum permittivity or dielectric constant (equal to 1.0), k is...

Images