Material surface modification method using ion infusion or infusion and deposition

Abstract

An ion implantation or implantation and deposition method for material surface modification is provided. The material surface modification process comprises: the system is vacuated for obtaining the gaseous or vapor state particles for implantation or implantation and deposition; the particles for implantation or implantation and deposition are induced into a dot-shape anode of the ionization and implantation or implantation and deposition system; in the ionization and implantation or implantation and deposition system, the dot-shape anode communicates with the positive electrode of the power supply, the large cathode or large cathode target workbench communicates with the negative electrode of the power supply, and the an electric field forms between the dot-shape anode and the large cathode or large cathode target workbench; when the voltage is higher than the ignition voltage, glow discharge is produced between the anode and the cathode, the ion in the plasma is accelerated, the electron is driven away, and the plasma sheath forms; the ion is accelerated after passing the sheath and is poured into the inside of the workpiece or deposited on the surface of the workpiece.

Description

technical field [0001] The invention relates to a method for modifying the surface of a material, in particular to a method for modifying the surface of a material by ion implantation or implantation and deposition. Used in the field of materials technology. Background technique [0002] The surface modification technology of material ion implantation or implantation and deposition has been developed to this day, and remarkable results have been achieved. However, the current ion implantation or implantation and deposition methods generally require various expensive ion sources or plasma excitation devices, which have complex structures and high costs. [0003] After literature search, it was found that Conrad et al applied for a U.S. patent, patent number: 4764394, patent name: plasma source ion implantation method and device (Method and apparatus for plasma source ion.implantation), the patented technology is: put the object in a vacuum In the container, different ion so...

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Problems solved by technology

[0004] The present invention aims at the above-mentioned deficiencies and defects existing in the background technology, and provides a material surface modification method by ion implantation or implantation and deposition, so that it can overcome the inability of the omnidirectional ion implantation or implantation and deposition method to treat sulfur, phosphorus, etc. Disadvantages of effective plasmaization and implantation of solid materials with electrical conductivity and some conductive materials with low melting point or high vapor pressure, such as sodium and calcium

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