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Pixel arrangement of the thin film transistor LCD

A thin-film transistor and liquid crystal display technology, applied in the field of pixel structure, can solve problems such as the decrease of aperture ratio

Inactive Publication Date: 2006-10-04
TPO DISPLAY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The black matrix on the color filter substrate will also reduce the aperture ratio

Method used

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  • Pixel arrangement of the thin film transistor LCD
  • Pixel arrangement of the thin film transistor LCD
  • Pixel arrangement of the thin film transistor LCD

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Embodiment Construction

[0045] Please refer to Figure 3 to Figure 8 It is a schematic diagram showing the manufacturing process of a low-temperature polysilicon thin film transistor array substrate according to a preferred embodiment of the present invention. First please refer to image 3 A patterned polysilicon layer is formed on a transparent substrate 301, and the polysilicon layer is ion-doped to form the source / drain 302b and the doped polysilicon layer 318. The doping type is, for example, N-type doped Doped or P-type doped. After forming the source / drain 302 b and the doped polysilicon layer 318 , a dielectric layer 322 is formed on the transparent substrate 301 to cover the source / drain 302 b and the doped polysilicon layer 318 . The material of the dielectric layer 322 is, for example, a dielectric material such as silicon nitride, silicon oxide, or the like.

[0046] Then please refer to Figure 4, forming the gate 302a, the scanning wiring 306 and the light-shielding metal layer 320 ...

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Abstract

The invention discloses thin film transistor LCD picture element arrangement, wherein a reservoir capacitor is composed of a doping polycrystalline silicon layer, a dielectric layer and an opacification sheet metal defined simultaneously with the source / drain in a low-temperature polycrystalline silicon thin film transistor, the opacification sheet metal is arranged above the doping polycrystalline silicon layer and in electrical connecting with the picture element electrode, because the opacification sheet metal distributed area is simultaneously the reservoir capacitor allocation area, the opening rate can be increased substantially.

Description

technical field [0001] The present invention relates to a pixel structure of a thin film transistor liquid crystal display, and in particular to a pixel structure of a low temperature polysilicon thin film transistor liquid crystal display (LTPS TFT-LCD) with high aperture ratio. Background technique [0002] Low temperature polysilicon thin film transistor liquid crystal display is different from the general traditional amorphous silicon thin film transistor liquid crystal display (a-Si TFT-LCD), its electron mobility can reach 200cm 2 / V-sec or more, so the area occupied by the thin film transistor component can be made smaller to meet the requirement of high aperture ratio, thereby improving the brightness of the display and reducing the overall power consumption problem. In addition, due to the increase in electron mobility, part of the driving circuit can be manufactured on the glass substrate together with the thin film transistor manufacturing process, which greatly i...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G02F1/1362G02F1/133G02F1/1335H01L27/00G09G3/36G09F9/35G02F1/136
Inventor 郑新安邱昌明
Owner TPO DISPLAY