Exposure method for once scanning two common exposure areas
An exposure method and exposure area technology, applied in the field of lithography exposure, can solve the problems of doubling exposure time, worrying about alignment problems, increasing costs, etc., and achieve the effect of reducing the difficulty of entering mass production and broad application prospects
Inactive Publication Date: 2006-11-01
SHANGHAI HUA HONG GROUP +1
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Problems solved by technology
[0007] However, the disadvantage of double exposure technology is that two reticles must be used to expose the same layer twice, doubling the exposure time and halving the machine efficiency, so it will greatly reduce the output and increase the cost, which is not desirable for production; in addition Alignment issues caused by double exposures are also a concern
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[0018] The following example illustrates a possible implementation process of the present invention, the purpose of which is to better explain the application of the present invention, but should not be construed as a limitation of the present invention.
[0019] 1. Load the mask and perform the alignment operation;
[0020] 2. Load silicon wafer and perform alignment operation, calculate compensation amount and set relevant parameters such as scanning distance, step length, scanning origin, etc.;
[0021] 3. Scan the double area, and step into the single area to expose the whole film;
[0022] 4. Repeat 2-3 to complete the exposure of all silicon wafers.
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The invention belongs to the technical field of photolithography exposure in the integrated circuit manufacturing process, and specifically relates to an exposure method for scanning two common exposure areas at one time. In order to extend the minimum line width of optical lithography technology and prolong the technical service life of existing lithography equipment, it is very attractive to use double exposure technology at the key level, but the price is that two plates need to be used to process the same layer separately. Two exposures double the exposure time and halve the efficiency of the machine. In addition, there are two exposures that are difficult to align. Therefore, the double-exposure technique has not yet been adopted for mass production. In order to improve the efficiency of the double exposure, the present invention proposes a new exposure method, specifically the exposure of two areas that can only be completed by two scans when the normal exposure is completed in one scan exposure. The new exposure method greatly improves the working efficiency of the double exposure technology, making it close to one exposure and thus can be used in mass production, and has broad application prospects.
Description
technical field [0001] The invention belongs to the photolithographic exposure technology in the integrated circuit manufacturing process, and specifically relates to a new exposure method for scanning two common exposure areas at one time. Background technique [0002] With the continuous development of integrated circuits, the minimum line width of transistors continues to shrink, and the length of transistor gates in advanced CMOS processes is close to 0.1 microns. The continuous reduction of feature line width has led to a substantial increase in chip integration, but the fine lines have brought great challenges to the optical lithography process. [0003] In order to continuously adapt to the reduction of line width and the improvement of integration, the optical lithography technology has been continuously improved: from contact exposure to proximity exposure, and then to reduced projection exposure; the wavelength of the exposure light source is from 430nm of I line t...
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IPC IPC(8): G03F7/20G03F7/00H01L21/027H01L21/30
Inventor 姚峰英
Owner SHANGHAI HUA HONG GROUP