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Patterning method

A technology of graphics and ink droplets, used in instruments, electrical components, circuits, etc., to solve problems such as low sensitivity, not yet fully established, and short wavelengths

Inactive Publication Date: 2006-12-06
SEIKO EPSON CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this method has not been fully established
Especially, in the prior art of this method, the wavelength of light is too short for practical application and the sensitivity of this method is too low
[0010] Therefore, there is no suitable technology that can consistently provide a sufficiently short channel length in a cost-effective manner

Method used

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Examples

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Embodiment Construction

[0034]The present invention provides a high resolution patterning technique that does not require photolithography or similar processes. Briefly, one mode of the invention is prepatterning with a first material, which is deposited on the substrate in the form of droplets of a solution of the first material, e.g., an organic polymer solution. into a solvent. It has been found that the use of an inkjet printhead is suitable for this purpose. The droplets deposited on the substrate expand, the extent of which depends on the parameters discussed previously. However, the solution containing the first material is formulated so that when the solvent evaporates and the droplet dries to leave the first material remaining, the perimeter of the deposited droplet remains unchanged relative to the substrate. This will hereinafter be referred to as pinned contact line deposition and will be described in more detail below. Pinning contact line deposition produces a ring-shaped deposit of ...

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PUM

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Abstract

The invention provides a method of pattering a substrate, in which a first material in solution is deposited on the substrate. The composition of the solution of the first material is selected so it dries to leave a residue of the first material on the substrate, the residue comprising a thin film in the centre and a ridge around the perimeter. The residue is etched to remove the thin film, leaving the ridge on the substrate. After etching the ridge is hydrophobic and the substrate is hydrophilic. An aqueous solution of a second material is then deposited on both sides of the ridge. After the aqueous solution has dried, the ridge is removed, leaving a layer of the second material on the substrate, the layer having a narrow gap therethrough. The layer may be used for the source and drain electrodes of an organic thin film transistor.

Description

technical field [0001] The invention relates to a pattern processing method of a substrate. In particular, the method of the present invention relates to substrate patterning for disposing electronic devices, such as thin film transistors (TFTs) and / or electro-optical devices, on a substrate. Background technique [0002] Photolithography is now widely used in the mass production of electronic devices to achieve very high resolution and alignment. In photolithography, a layer of spin-coated photoresist is provided on the substrate and exposed to blue light or ultraviolet light with an aligner or a stepper, and it combines a pattern on a master mold including a mask or a reticle with Substrate alignment. The exposed photoresist is then developed so that a pattern of photoresist is formed on the substrate. Typically this is followed by an etch or deposition process to pattern a target material. The resolution achieved by lithography depends on the wavelength of the exposur...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/40H01L21/288H01L21/336H01L29/786H05B33/14H10K99/00
CPCH01L51/0516H01L51/0005H01L51/0541H01L51/0022H10K71/135H10K71/611H10K10/468H10K10/464G02F1/13
Inventor 川濑健夫
Owner SEIKO EPSON CORP