Method of preparing boron-phosphor-silicon fluorine glass

Abstract

An equipment and method for producing fluorine-doped B-P-Si glass (F-BPSG) on a device through low-pressure CVD process. On a substrate with gap as narrow as 0.10 micron and structure of shape ratio of 6 to 1, F-BPSG is a layer with basically to void and no grain. The reactant gases include sources comprising B and P dopant, oxygen and the mixture of TEOS and FTES. F-BPSG is deposited at 750-850 deg.c temperature and under 1-3 torr pressure, and is annealed preferably in similar conditions to level the surface. Both F-BPSG and semiconductor chip with F-BPSG layer are provided.

Description

technical field [0001] The present invention relates to semiconductor electronic components and methods of manufacture thereof, and more particularly to improved borophosphosilicate glass for use as substantially void-free layers on semiconductor wafers as narrow as 0.10 μm and with aspect ratios as high as 6:1 , and methods including making the glass layers at reflow temperatures of about 800° C. lower than currently suggested manufacturing requirements. Background technique [0002] In the manufacture of semiconductor electronic components, the components must be encapsulated in glass, or glass is used as an interlayer dielectric film. Typically, the glass layer is SiO deposited on the wafer surface by chemical vapor deposition (CVD) 2 layer. The need for finer circuit patterns and higher circuit densities due to growing demands from the industry has necessitated the development of improved glass layers to layer semiconductor surfaces in the manufacturing process. Of pa...

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This breaks the oxygen bridge bonds between silicon a...

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