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Processing method of SOC silicon substrate

A processing method and technology of silicon substrate, applied in the manufacture of electrical components, circuits, semiconductor/solid-state devices, etc., can solve the problems of complex process, incompatibility, application, etc., and achieve simple process, high flexibility, and strong controllability Effect

Inactive Publication Date: 2007-05-09
SEMICON MFG INT (SHANGHAI) CORP +1
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Problems solved by technology

However, there are still many problems in the existing technologies, some are not compatible with the current mainstream technology, such as MEMS technology, some technology is too complicated to be applied in actual circuit realization, and some methods are not compatible with the operating frequency It will fail when it exceeds GHz, and even introduce more noise, so it is imperative to develop a simple, practical, and compatible SOC substrate isolation technology with existing mainstream microelectronics processes

Method used

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  • Processing method of SOC silicon substrate
  • Processing method of SOC silicon substrate
  • Processing method of SOC silicon substrate

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Embodiment Construction

[0035] 图5给出了用特氟仑(又称聚四氟乙烯)材料制成的多孔硅腐蚀设备简图,特氟仑有很好的抗HF酸腐蚀特性,是制作该设备的最佳材料。制作完电路的Si片作为阳极,金属Pt片作为阴极。其中Si片正面(有电路的一面)接电极,背面与特氟仑腐蚀槽的侧壁开口接触,在进行电化学腐蚀的时候,使Si片的背面与腐蚀液相接触,Si片的正面接恒流源的阳极。

[0036] 本发明以数字、模拟混合信号集成电路的背向选区腐蚀为例,详细说明本发明。图6为同一衬底上同时包含数字和模拟部分的芯片截面示意简图。该电路制作在p型体硅片上,其电阻率为2~7Ω / cm 2 ,厚度为400μm。电路制作之前,先在硅片正面制作一高浓度磷掺杂p + 层,然后再淀积一层隔离材料,如Si 3 N 4 ,以对电路进行相应的保护。在电路的制造过程中用金属由p + 层引出电极。待电路制作完成之后,焊接细金属丝与从p + 层引出的金属,得到引出的电极。最后将Si片切割成面积为1cm 2 的大小的Die。

[0037] 准备完毕后即可对待腐蚀的硅片进行加工了,具体步骤为:

[0038] 1、用防HF酸腐蚀的绝缘胶带将待加工的硅片双面密封,其中硅片背面的胶带上带有小孔,即是要腐蚀的区域,将其曝露出来,同时要注意边缘密封要好;

[0039] 2、用去离子水清洗腐蚀槽;

[0040] 3、将待腐蚀的硅片固定于腐蚀槽,Si片与侧壁接触处要尽量密闭,防止腐蚀液渗漏;

[0041] 4、按HF∶C 2 h 5 OH:H 2 O=1∶1∶2(摩尔比)的溶液配比配制腐蚀液150毫升;一般来讲,腐蚀过程中,起主要作用的是HF酸,乙醇主要起活化剂的作用,它将腐蚀过程中产生的气泡带离硅片,加速多孔硅的生成;通过改变腐蚀溶液的配比可以改变多孔硅生成的速率和多孔硅孔径的大小与形状,但这不是主要的影响因素,电流密度才是影响上述结果的主要因素;

[0042] 5、密闭腐蚀槽,并连接恒流电源电极,Si片电极1接阳极(如图6),金属Pt片接阴极;

[0043] 6、恒流电源通电,电流密度设定为30mA / cm 2 ,通电时间设定为3小时;

[0044] 7、断开电极1,接通电极2(如图7),在电流密度为30mA / cm 2 的条件下继续腐蚀1小时;电流密度是影响多孔硅生长的主要...

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Abstract

The method includes steps: electrode lead is fetched out from face of silicon chip with circuit being prepared on it. The said whole chip is sealed at two sides by insulating tape for anticorrosion of HF acid with a small hole on its back side as an area to be erode, where there is no circuit. The prepared inductance is fixed on silicon chip bracket on etching trough. The said electrode lead is connected to anode of corrosion circuit, and metal Pt sheet is as cathode of corrosion circuit. Mixed liquor in ratio according to mol ratio HF : C2H5OH : H2O = 1: 1: 2 is added to the etching trough. Treatment procedure is as following: turning on corrosion circuit, keeping current density at 5-50mA / cm2, corrosion time is 3-5 hours, rinsing processed chip, removing insulating tape and drying treatment, testing and encapsulating. Features are: simple method and easy of operation, and compatible to technique of CMOS.

Description

technical field [0001] The invention relates to a processing method of an SOC silicon substrate. Background technique [0002] From discrete components to integrated circuits to SOC (system on chip), it is a major revolution in the field of microelectronics. In the 21st century, integrated circuits have entered the SOC era. [0003] With the development of semiconductor process technology, integrated circuits can integrate more and more complex functional circuits onto a single chip, and SOC is produced under the general direction of integrated circuits' transformation to integrated systems. As a system-level integrated circuit, SOC can realize signal acquisition, conversion, storage, processing and I / O functions on a single silicon chip, integrating digital circuits, analog circuits, signal acquisition and conversion circuits, memory, MPU (microprocessor) , MCU (Machine Control Unit), DSP (Digital Signal Processor), etc. are integrated on one chip to realize a system func...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/306
Inventor 杨利张国艳廖怀林周毅宋睿丰延涛刘军华黄如张兴
Owner SEMICON MFG INT (SHANGHAI) CORP