Processing method of SOC silicon substrate

Abstract

The method includes steps: electrode lead is fetched out from face of silicon chip with circuit being prepared on it. The said whole chip is sealed at two sides by insulating tape for anticorrosion of HF acid with a small hole on its back side as an area to be erode, where there is no circuit. The prepared inductance is fixed on silicon chip bracket on etching trough. The said electrode lead is connected to anode of corrosion circuit, and metal Pt sheet is as cathode of corrosion circuit. Mixed liquor in ratio according to mol ratio HF : C2H5OH : H2O = 1: 1: 2 is added to the etching trough. Treatment procedure is as following: turning on corrosion circuit, keeping current density at 5-50mA / cm2, corrosion time is 3-5 hours, rinsing processed chip, removing insulating tape and drying treatment, testing and encapsulating. Features are: simple method and easy of operation, and compatible to technique of CMOS.

Description

technical field [0001] The invention relates to a processing method of an SOC silicon substrate. Background technique [0002] From discrete components to integrated circuits to SOC (system on chip), it is a major revolution in the field of microelectronics. In the 21st century, integrated circuits have entered the SOC era. [0003] With the development of semiconductor process technology, integrated circuits can integrate more and more complex functional circuits onto a single chip, and SOC is produced under the general direction of integrated circuits' transformation to integrated systems. As a system-level integrated circuit, SOC can realize signal acquisition, conversion, storage, processing and I / O functions on a single silicon chip, integrating digital circuits, analog circuits, signal acquisition and conversion circuits, memory, MPU (microprocessor) , MCU (Machine Control Unit), DSP (Digital Signal Processor), etc. are integrated on one chip to realize a system func...

AI Technical Summary

Problems solved by technology

However, there are still many problems in the existing technologies, some are not compatible with the current mainstream technology, such as MEMS technology, some technology is too complicated to be applied in actual circuit realization, and some methods are not compatible with the operating frequency It will fail when it exceeds GHz, and even introduce more noise, so it is imperative to develop a simple, practical, and compatible SOC substrate isolation technology with existing mainstream microelectronics processes

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