Unlock instant, AI-driven research and patent intelligence for your innovation.

Preparation for single-crystal thin film covering layer substrate with r-LiALO2

A technology of single crystal thin film and covering layer, applied in the direction of single crystal growth, chemical instruments and methods, coating, etc., can solve the problems of waste of raw materials, non-stoichiometric volatilization, difficulty in crystal growth, etc.

Inactive Publication Date: 2007-06-20
SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] (2) Due to LiAlO 2 Non-stoichiometric volatilization is prone to occur at high temperature in the melt, crystal growth is difficult, and it is difficult to obtain large-size, high-quality LiAlO 2 Single crystal, the largest sapphire diameter reaches 350mm, while LiAlO 2 The diameter of the substrate is less than 100mm; moreover, the processing of the substrate will cause a lot of waste of raw materials

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] Weigh a certain amount of LiOH and Al 2 o 3 (molar ratio 2:1) put it into a reaction vessel, heat it in the air atmosphere, and keep the temperature at 600°C to fully react for 1.5h (above) to obtain γ-LiAlO 2 , and then the γ-LiAlO 2 The powder is pressed into a target;

[0025] Polished and cleaned α-Al 2 o 3 The single crystal substrate is sent to the Edwards ESM100 radio frequency magnetron sputtering device. The size of the vacuum chamber of the device is φ322×270mm. The vacuum system is a mechanical pump, an oil diffusion pump, and an additional liquid nitrogen cooling trap. The vacuum degree can reach 2 ×10 -4 Pa, the inner diameter of the target seat is 100mm, the inner cavity is passed through cooling water, and the target is fixed with a pressure ring and screws. The substrate base is φ250mm, and the cooling water is passed inside, and the distance between the target and the substrate is about 60mm. The RF power generator used for sputtering is controll...

Embodiment 2

[0027] Weigh a certain amount of LiOH and Al 2 o 3 (molar ratio 2:1) put it into a reaction vessel, heat it in the air atmosphere and keep the temperature at 600°C for a full reaction of 1.5h (above) to obtain γ-LiAlO 2 , and then the γ-LiAlO 2 The powder is pressed into a target;

[0028] Send the polished and cleaned Si single crystal substrate into the Edwards ESM100 radio frequency magnetron sputtering device, the vacuum degree is greater than 2×10 -4 Pa, high-purity argon with a purity ≥ 99.999% for sputtering, the pressure of argon is 6.6×10 -2 Pa, the substrate temperature is 700°C, the film deposition rate is about 0.063nm / s, and the film thickness is 500nm.

[0029] Experiments have proved that the process of this method is simple and easy to operate, and the prepared γ-LiAlO 2 The single crystal thin film cap layer substrate material is suitable for the epitaxial growth of high quality GaN.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

This invention relates to preparation of gama-LiAlO2 monocrystal film on alpha-Al2O3 or Si substrate by deposition. It is carried out by: preparing gama-LiAlO2, using laser pulses to vapor surface molecules out of target material, heating the target material, and depositing gama-LiAlO2 on it. It is simple and suitable for quality GaN growth on substrate by epitaxial process.

Description

technical field [0001] The invention relates to the epitaxial growth of InN-GaN-based blue-light semiconductors, in particular to a method of radio frequency magnetron sputtering with γ-LiAlO 2 A method for preparing a single crystal thin film covering layer substrate. Background technique [0002] Wide bandgap III-V compound semiconductor materials represented by GaN are attracting more and more attention, they have excellent characteristics, such as stable physical and chemical properties, high thermal conductivity and high electron saturation velocity, direct bandgap materials The optical transition probability is an order of magnitude higher than that of the indirect bandgap, so wide bandgap InN-GaN-based semiconductors are used in blue and green light-emitting diodes (LEDs) and laser diodes (LDs), high-density information reading and writing, underwater communications, It has broad application prospects in deep water exploration, laser printing, biological and medical ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C30B23/02C30B23/06C23C14/08C23C14/35H01L33/00
Inventor 夏长泰王银珍周圣明张连翰徐军
Owner SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI