High speed and high-capacity flash solid memory structure and manufacture process

Abstract

This invention relates to a flash solid memory structure containing a controlling module and multi-memory modules related to the storage memory volume with a modular laminated structure adopting uneasy to be lost FLASH memory chips as the medium. The controlling module with DSP as the center consists of programmable chip control circuit, interface 1394, RS coder-decoder, buffer FIFO, EPROM of storing program chip and SRAM of storing data chip. The process of the storage memory is as the following two steps of writing in the storage memory chips: a. Data write-in: writing data into the page registers by ns, b. Automatically program: transmitting the data of the page registers to the memory unit, the above two steps should be taken by turns so as to greatly reduce the write-in time comparing with ordinary multi-route parallel write-in technology.

Description

(1) Technical field [0001] The invention belongs to the technical field of electronic information, and in particular relates to a high-speed and large-capacity flash solid-state storage device. (2) Background technology [0002] As one of the important components of the computer system, the memory can be regarded as a warehouse for storing data outside the computer. In the prior art, the main external memory includes soft and hard disk drives, magnetic tape drives, and optical disk drives. The mechanism of storing data on the magnetic layer has different characteristics and is used in different occasions only because of the different media (or media) for storing data and different structures. However, these memories cannot get rid of the weakness of magnetic media. They are affected by the environment. The impact of temperature is large, and it cannot withstand mechanical vibration and shock. As a memory, its storage capacity and speed are greatly limited, which affects its ...

AI Technical Summary

Problems solved by technology

[0005] In order to overcome many defects of the existing solid-state memory such as slow storage speed and insufficient storage capacity, a solid-state memory with fast storage speed and large capacity is newly developed.

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