Prepn of nitride-oxide film
A technology of oxide film and pre-oxidation, which is used in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., and can solve problems such as inability to apply
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[0026] Its formula of cleaning liquid that the present invention adopts is:
[0027] 3 # Liquid formula: H 2 SO 4 :H 2 o 2 =5:1 (volume ratio)
[0028] 1 # Liquid formula: NH 4 OH:H 2 o 2 :H 2 O=0.8:1:5 (volume ratio)
[0029] HF / IPA formula: HF:IPA:H 2 O=0.5%:0.02%:1
[0030] 1. Wafer cleaning: 3 # Liquid degumming for 10 minutes, 3 # Liquid cleaning 10 minutes, 1 # liquid wash for 5 minutes, H 2 O / HF (20 / 1) drift for 15 seconds.
[0031] 2. Pre-oxidation: thick 150 Å, 850 ℃, dry O 2 , 170 points+N 2 , annealed for 30 minutes.
[0032] 3. Chemical vapor deposition (LPCVD) Si 3 N 4 : Thickness 1300 Å, 780°C.
[0033] 4. Cleaning: 3 # solution for 10 minutes, 1 # Liquid 5 minutes, H 2 O / HF (1 / 20), drift for 15 seconds.
[0034] 5. Si 3 N 4 Annealing: 800°C, N 2 , annealed for 30 minutes.
[0035] 6. Photolithographic active area: 9912 glue, 1.2 μm.
[0036] 7. Reactive ion etching Si 3 N 4 : SiO is left in the active area 2 80 , power 150W, pr...
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