Thin film rare earth permanent magnet, and method for mfg. same

Abstract

The object of the present invention is to provide a thin-film rare-earth permanent magnet capable of anisotropic thin film formed by vapor phase growth in the stacking direction and a manufacturing method thereof. After stacking the single atomic layer 10 of the rare earth element, repeat the formation operation of the atomic stack unit 13 multiple times, and stack a plurality of atomic stack units 13 with specific characteristics. The atomic stacks 12 of the transition metal elements of the monoatomic layer 11 of the metal element are formed, so that each atomic stack 12 has an easy magnetization axis in the stacking direction of the monoatomic layer 11, and suppresses being magnetized by the monoatomic layer of the rare earth element. The generation of the diamagnetic region sandwiched by 10 and 10 produces a strong coercive force, and by increasing the content ratio of transition metal elements to rare earth elements, the residual magnetic flux density has a dramatic increase.

Description

field of invention [0001] The present invention relates to a thin-film rare-earth permanent magnet and a method for producing the same. The thin-film rare-earth permanent magnet is composed of at least one atomic laminate unit, and the unit has good surface roughness like a single crystal silicon wafer, On the non-magnetic material substrate with flatness, after setting the monoatomic layer of rare earth elements, multi-layer monoatomic layers of transition metal elements are stacked, so as to obtain a thin film magnet with easy magnetization axis in the stacking direction and high magnetic properties. Background technique [0002] Thin-film rare-earth permanent magnets have traditionally been manufactured mainly by stacking Nd-Fe-B-based materials by vacuum evaporation and sputtering. The crystalline structure of the laminate obtained by this method is polycrystalline, so the easy magnetization axis is irregular, and only isotropic permanent magnet properties can be obtaine...

AI Technical Summary

Problems solved by technology

The problem with this method is that the easy magnetization axis of Nd-Fe-B, that is, the growth direction of the C-axis changes due to the crystallographic direction of the transition metal layer of the base, so it is very difficult to align them all in the stacking direction.

However, the above-mentioned perpendicular magnetization film is based on the premise of using a magnetic medium, so the coercive force is very low (about 1kOe), and it cannot be used as a permanent magnet.

[0006] In the past, there have been various proposals to manufacture thin-film permanent magnets by sputtering, vapor deposition, ion plating, etc., but no matter which method is used to manufacture the magnets, the obtained magnetic properties are significantly lower than those of the magnets produced in different directions. Anisotropic sintered permanent magnets

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