High speed silicon etching method

Abstract

A high speed silicon etching method, comprising the steps of installing a processed body (W) with a silicon area in contact with a processing space in a processing chamber holdable in a vacuum, leading etching gas into the processing chamber to generate a gas atmosphere with a gas pressure of 13 to 1333 Pa (100 mTorr to 10 Torr), and applying a high frequency power to the gas atmosphere to generate a plasma, whereby a silicon area etching speed can be more increased because the sum of the quantity of charged particles such as ions and the quantity of radicals are increased in the plasma.

Description

technical field [0001] The invention relates to a silicon high-speed etching method for high-speed etching of a silicon region of a processing object such as a single crystal silicon substrate. Background technique [0002] Recently, 3-dimensional mounting devices with a multilayer structure are being developed. Such a three-dimensional mounting device is configured, for example, by stacking silicon substrates on which circuit cells and memory cells are formed in layers to form a multilayer substrate, and connecting these layers through via wiring. With this structure, a device with high space utilization efficiency can be manufactured in miniaturization. [0003] Since the three-dimensionally mounted device described above needs to form wiring via holes with a diameter of approximately 10 to 70 μm on a silicon substrate with a thickness of approximately 100 μm, extremely high-speed etching is required. [0004] In addition, the high-speed etching of silicon is not only ap...

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Problems solved by technology

[0006] However, even if high-speed etching is performed using the existing inductively coupled plasma etching equipment, the etching rate can only reach about 10 μm / min, which cannot fully satisfy the corrosion rate.

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