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Method for producing semiconductor substrate

A production method and semiconductor technology, applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve problems such as increased leakage current and inability to produce high-quality MOSFETs

Inactive Publication Date: 2003-12-10
SHARP KK
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Problems solved by technology

[0009] However, even if the implantation amount of hydrogen ions is set to be lower than the amount for completely relaxing the SiGe layer 2, it cannot avoid the generation of the interface between the SiGe layer 2 and the silicon substrate 1 in the subsequent heat treatment as shown in FIG. 3(b). New Tapping for Dislocation 6
Therefore, in this case, let the process go through a conventional STI process shown in Figures 3(c) and 3(d), and after making the MOSFET, it will be found that: Below there are many tapping dislocations 6 where the leakage current increases when a reverse voltage is applied across these nodes, so the problem with this production technique is that it cannot produce high quality MOSFETs

Method used

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  • Method for producing semiconductor substrate
  • Method for producing semiconductor substrate
  • Method for producing semiconductor substrate

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Embodiment Construction

[0015] According to the production method of a semiconductor substrate of the present invention, first, in step (a), a SiGe layer is formed on a substrate whose surface is made of silicon.

[0016] The substrate whose surface is made of silicon may be a silicon substrate made of amorphous silicon, microcrystalline silicon, single crystal silicon, polycrystalline silicon or silicon mixed with two or more of these crystal states, or it may be a silicon substrate with These silicon layers are called SOI substrates. A single crystal silicon substrate is particularly preferred.

[0017] The SiGe layer can be formed by various conventional methods, such as: CVD method, sputtering method, vacuum deposition method or MEB method. Specifically, the SiGe layer is preferably formed by an epitaxial growth method among CVD methods. The film-forming conditions in this case can be selected from conditions known in the art, specifically, for example, a film-forming temperature of 400°C-900°C...

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Abstract

A manufacturing method of a semiconductor substrate comprising the steps of: (a) forming a SiGe layer on a substrate of which the surface is made of silicon; (b) further forming a semiconductor layer on the SiGe layer; and (c) implanting ions into regions of the SiGe layer in the substrate that become element isolation formation regions, and carrying out a heat treatment.

Description

technical field [0001] The invention relates to a method of producing a semiconductor substrate. More particularly, the present invention relates to a semiconductor substrate production method capable of efficiently obtaining a high-quality silicon substrate, in which method distortion of silicon is utilized. Background of the invention [0002] A lot of research has been done in recent years on the production of high-mobility transistors, in which heterostructures are formed with materials with lattice constants different from Si, i.e., grown epitaxially on silicon substrates with lattice constants different from Si Therefore, in order to increase the speed of MOSFET (Metal Oxide Semiconductor Field Effect Transistor), it is necessary to utilize this distortion, thereby Replace with Si-SiO 2 The MOS (Metal Oxide Semiconductor) interface is used as the traditional technology of the channel. [0003] use Figure 3(a)-3(e) The technique shown serves as an example of the tec...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/76H01L21/20H01L21/205H01L21/265H01L21/762H01L29/78
CPCH01L21/76243H01L21/76267H01L21/76283H01L21/76264H01L21/18
Inventor 马场智也
Owner SHARP KK