Semiconductor device, display device, and light-emitting device, and methods of manufacturing the same
A technology for display devices and semiconductors, applied in semiconductor/solid-state device manufacturing, semiconductor devices, organic semiconductor devices, etc., can solve the problems of poor heat resistance of plastic films and semiconductor devices that have not yet been realized
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Embodiment 1
[0134] Various embodiments of the present invention are described below with reference to FIGS. 5A-6D . Here, a method of simultaneously manufacturing an n-channel TFT and a p-channel TFT on the same substrate will be described in detail.
[0135] Although a quartz substrate, a semiconductor substrate, a ceramic substrate, a metal substrate, etc. can be used as the substrate 500. However, a glass substrate (#1737) was used as the substrate 500 here. First, a silicon oxynitride layer with a thickness of 100 nm was formed as the nitride layer 501 on the substrate 500 by the PCVD method.
[0136] Subsequently, a 50 nm thick tungsten layer was formed as a metal layer 502 by sputtering, and a 200 nm thick silicon oxide layer was continuously formed as an oxide layer 503 by sputtering without exposure to the atmosphere. This oxide layer was formed under the following conditions: a sputtering device of RF mode was used; a silicon oxide target (30.5 cm in diameter) was used to flow ...
Embodiment 2
[0180] In this embodiment, the case of fabricating a CPU as a semiconductor device of the present invention will be described with reference to FIG. 7 .
[0181] As shown in FIG. 7A, a CPU 705 composed of a combination of a plurality of TFTs is formed on a film 701 containing a fluororesin. A fluororesin-containing film 702 is further formed on the CPU 705 , and the fluororesin-containing films 701 and 702 in this embodiment have a structure that completely covers the CPU 705 . With such a structure, the CPU 705 can be completely blocked from the outside, thereby preventing moisture, oxygen, and the like from entering from the outside.
[0182] However, since the CPU 705 needs to be connected to the outside through the bonding wire 704, the CPU 705 must have a structure in which wiring is formed inside for electrical connection.
[0183] Therefore, in this embodiment, the wiring 706 inside the CPU 705 is connected to the bonding wire 704 via the external connection portion 71...
Embodiment 3
[0188] A semiconductor device formed according to the present invention has a thin-film, lightweight and flexible structure. Therefore, a plurality of semiconductor devices can be combined on one substrate. Note that in addition to glass and quartz, the substrate here also includes flexible substrates such as plastic films.
[0189] In other words, in the case where the semiconductor device is a CPU, a plurality of CPUs can be combined on one substrate to achieve integration.
[0190] In addition, in the case where a plurality of semiconductor devices can be integrated on one substrate, the semiconductor device of the present invention has a film containing a fluororesin formed on its surface, and its surface is reversely sputtered to make its surface The concave and convex shapes are formed, and then, the semiconductor device is attached to the substrate with an adhesive or the like.
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Abstract
Description
Claims
Application Information
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