Method for synthesizing boron nitride from aether boron trifluoride and lithium nitride

A technology of boron trifluoride diethyl ether and a synthesis method, which is applied in the fields of chemical instruments and methods, nitrogen compounds, inorganic chemistry, etc., can solve the problems of high price, high cost, and the toxicity of synthetic boron nitride raw materials, so as to reduce costs and increase reliability. operational effect

Inactive Publication Date: 2004-10-27
UNIV OF SCI & TECH BEIJING
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The object of the present invention is to provide a method for synthesizing boron nitride with boron trifluoride ether and lithium nitride, the raw materials used do not contain boron tribromide, which solves the problem of high toxicity and high price of synthetic boron nitride raw materials

Method used

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  • Method for synthesizing boron nitride from aether boron trifluoride and lithium nitride
  • Method for synthesizing boron nitride from aether boron trifluoride and lithium nitride
  • Method for synthesizing boron nitride from aether boron trifluoride and lithium nitride

Examples

Experimental program
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Effect test

Embodiment 1

[0013] (1) Pour 50ml of benzene into an unlined stainless steel reaction kettle

[0014] (2) After grinding 5g of lithium nitride into a fine powder in a fume hood, put it into the reaction kettle

[0015] (3) Slowly pour 25ml of boron trifluoride diethyl ether into the reaction kettle in a fume hood, stir while pouring to make the raw materials evenly mixed, then seal the reaction kettle, and heat up to 300°C at a heating rate of 5°C per minute. 72 hours at temperature

[0016] (4) After the reactor is cooled, open the reactor to take out the reaction product. The reaction product was dissolved in deionized water and centrifuged to remove water-soluble substances, repeated three times, then soaked in 2mol / L dilute hydrochloric acid for 1 hour, washed with deionized water, and centrifuged three times. The final product is dried and ground to obtain the final reaction product.

[0017] figure 1 and figure 2 Respectively are the X-ray diffraction spectrum and the Fourier t...

specific Embodiment 2

[0018] (1) Pour 50ml of benzene into an unlined stainless steel reaction kettle

[0019] (2) After grinding 5g of lithium nitride into a fine powder in a fume hood, put it into the reaction kettle

[0020] (3) Slowly pour 50ml of boron trifluoride diethyl ether into the reaction kettle in a fume hood, stir while pouring to make the raw materials evenly mixed, then seal the reaction kettle, and heat up to 400°C at a heating rate of 5°C per minute. 60 hours at temperature

[0021] (4) After the reactor is cooled, open the reactor to take out the reaction product. Dissolve the reaction product in deionized water and centrifuge to remove water-soluble substances, repeat the process 5 times, then soak in 2mol / L dilute hydrochloric acid for 1 hour, wash with deionized water, and centrifuge 3 times. The final product is dried and ground to obtain the final reaction product.

[0022] image 3 and Figure 4 They are the X-ray diffraction spectrum and Fourier transform infrared spe...

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Abstract

A process for preparing boron nitride from boron trifluoride ether and lithium nitride by solvent heat synthesis method includes adding benzene as solvent in reactor, adding lithium nitride, stirring, adding boron trifluoride ether, stirring, closing reactor, heating to 250-500 deg.C, holding the temp, cooling, dissolving in ionized water, centrifugal separation of supernatant, repeating the dissolving and separation steps, immersing in solution of hydrochloric acid, water washing, centrifugal separation of deposit, and drying.

Description

technical field [0001] The invention belongs to the technical field of boron nitride preparation, and in particular provides a method for synthesizing nanometer hexagonal boron nitride and cubic boron nitride method. Background technique [0002] Boron nitride mainly has two structural types: hexagonal boron nitride and cubic boron nitride. Among them, nano-hexagonal boron nitride has high activity, high insulation, high thermal conductivity and low melting point characteristics, so that it can be used as low melting point insulating materials and sealing materials, additives for catalysts and special-purpose coatings, and as synthetic Raw materials for large cubic boron nitride polycrystals. Cubic boron nitride is a superhard material whose hardness is only lower than that of diamond, but it has superior performance than diamond when grinding ferrous metals. Various tools made of cubic boron nitride have been applied in the field of machining. It is also the semiconducto...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B21/064
Inventor 徐晓伟范慧俐牟其勇李玉萍李永寿张黛
Owner UNIV OF SCI & TECH BEIJING
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