Micro dynamic piezoresistance pressure sensor and manufacturing method thereof

Abstract

The invention relates to a micro-type dynamic piezoresistive pressure sensor and its making method, using MEMS silicon bulk micromachining method to make a pressure sensitive chip of E-shaped silicon cup structure, the reverse side of the chip is welded with static seal technique, Pyres glass ring and Hitachi alloy ring, to form silicon back contact medium quasi-level packaging, the reverse back of the chip is covered with anti-interference insulating layer, the right side of the chip is connected with a lead cable through connecting circuit, the sensor tube cap with cable drawing-off mouth at the tail is hermetically welded to the Hitachi alloy ring to form sealed isolation between the side pressure surface and the back pressure cavity, the tail of the tube cap squeezes tightly the cable without sealing, the nozzle part of the sleeve covered on the cable is hermetically covered on the tail of the tube cap, the heat-shrinkable tube segment covered on the cable is hermetically fixed with the outer end part of the sleeve nozzle, thus implementing atmosphere connection between the back pressure cavity and the measured environment, and it is used in shrinkage mould test for hydraulic engineering like dam, ship gate, pier, embankment, etc. and has low measuring range, high sensitivity, strong anti-interference performance, and good dynamic performance during fluid dynamic test.

Description

technical field [0001] The invention relates to a miniature dynamic piezoresistive pressure sensor and a manufacturing method thereof, in particular to a micro dynamic piezoresistive pressure sensor based on MEMS (Micro Electro Mechanical System) silicon micromachining technology and a manufacturing method thereof, especially for large Hydraulic shrinkage tests of dams, ship locks, bridge piers, dikes, ships, torpedoes and offshore platforms. Background technique [0002] The silicon micromachining technology of MEMS (Micro Electro Mechanical System) technology was used in the manufacture of piezoresistive pressure sensors in the late 1970s. Using the piezoresistive effect of silicon, a certain crystal orientation on the silicon wafer was used by the planar integrated circuit process. , A strain-detecting piezoresistor made at a certain position by oxidation diffusion or ion implantation doping, photolithography, etc., and interconnected to form a Wheats...

AI Technical Summary

Problems solved by technology

The chip of Kulite's micro sensor has a small radial size, so the natural frequency is high, but due to the need to face the medium, the influence of medium dust and the influence of light effects, Kulite has to package products on the front of the silicon chip A thin cap with an array of holes punched by a laser is placed in front of the front, and it is not only for ventilation but also to prevent dust particles from hitting the center of the thinnest and easily punctured film at high speed. These array holes are usually called M-type or S-shaped cloth is placed on the outer edge of the film, this protection will seriously affect the dynamic frequency response of the use

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