Unlock instant, AI-driven research and patent intelligence for your innovation.

Process kit for erosion resistance enhancement

A technology of corrosion resistance and components, which is applied in the direction of electrical components, semiconductor/solid-state device manufacturing, discharge tubes, etc., and can solve the problem of destroying the spatial uniformity of etch rate

Inactive Publication Date: 2005-02-09
APPLIED MATERIALS INC
View PDF0 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0011] Etching of process components not only generates high levels of particle contamination, but also disrupts the spatial uniformity of etch rates near the wafer perimeter, resulting in more defects

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Process kit for erosion resistance enhancement
  • Process kit for erosion resistance enhancement
  • Process kit for erosion resistance enhancement

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0030] The process component of the invention can provide uniform plasma ions on the surface of the semiconductor wafer and make the plasma energy distribution uniform. Moreover, the process component of the present invention can prevent the corrosion of highly reactive substances produced in the plasma, so it can effectively prolong the service life, increase the production capacity, and reduce the consumption cost of the process. In addition, the process assembly of the present invention can be applied in a plasma reactor, such as Dielectric Etch eMAX System (Dielectric Etch eMAX System), Dielectric Etch SupereCentura System (Dielectric Etch SupereCentura System) or Centura MxP Dielectric Etch System (Centura MxP DielectricEtch System).

[0031] figure 2 detail drawing figure 1A cross-sectional view of a conventional susceptor 130 , wafer 190 and process components 195 . The wafer 190 is fixed on an electrostatic chuck (not shown), or e-chuck. The e-chuck is located on ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

A process kit is described that resists plasma erosion, preserves the spatial uniformity of plasma properties, reduces particle generation in the chamber, and significantly enhances the lifetime of the process kit. A layer of polymer material covers the top surface of the process kit. The polymer material is fluorocarbon-based and not reactive with the species in the plasma. The polymer material not only protects the process kit from progressive erosion, but also prevents the generation of particles in the chamber. The polymer material has similar permittivity to that of the process kit and therefore maintains the spatial uniformity of plasma properties, e.g., etch rate, near the wafer perimeter. The thickness of the layer is controlled between 0.5 and 1.5 mm such that the difference between its coefficient of thermal expansion and that of the process kit will not cause the layer to peel off the process kit's top surface.

Description

technical field [0001] The present invention relates to a process component that surrounds a semiconductor workpiece in a plasma chamber to improve the spatial uniformity of plasma energy distribution on the surface of the workpiece. In particular, the present invention relates to a fluorocarbon polymer layer covering the upper surface of a process component that resists plasma corrosion, reduces particle contamination during etching, and increases process component lifetime. Background technique [0002] Semiconductor processing includes a series of process steps to produce many defined integrated circuits in a semiconductor workpiece, such as a silicon wafer used in circuit design. One of the important processes is the plasma etching process, which is used to transfer the pattern of one mask material layer to another film layer under the mask, such as a conductive layer or a dielectric material layer , and plasma etching is to remove the film layer material from the wafer...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/3065H01J37/32
CPCH01J37/32477H01J37/32642H01L21/3065
Inventor 珍妮弗·Y·桑亚娜达·H·库玛太许山恩
Owner APPLIED MATERIALS INC