Wire cutting liquid of semiconductor material

A wire cutting and semiconductor technology, applied in the field of wire cutting fluid for semiconductor materials, can solve the problems of silicon chip surface damage, mechanical stress and thermal stress, etc., to reduce damage, facilitate cleaning and subsequent processing, lubrication and cooling significant effect

Inactive Publication Date: 2005-05-25
刘玉岭
View PDF0 Cites 18 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The present invention aims to solve the technical problem that the known wire cutting fluid has unsatisfactory effects in overcoming the surface damage, mechanical stress and thermal stress of the silicon wafer in the wire cutting process, and discloses a chemically effective, easy to clean, good heat dissipation effect, It has good penetration and lubricating effect, can significantly reduce the depth and stress of the damaged layer on the surface of silicon wafers, and is a cheap wire cutting fluid for semiconductor materials

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] Embodiment 1: Prepare 1000 g of wire cutting fluid.

[0029] Take polyethylene glycol 200 (PEG200) 880g, amine base-hydroxyethylethylenediamine 80g, penetrant-polyoxyethylene secondary alkyl alcohol ether (HJFC) 15g, ether alcohol active agent-0п-7 15g, chelate Mixture-FA / O 10g.

[0030] Slowly add the hydroxyethylethylenediamine, polyoxyethylene secondary alkyl alcohol ether (HJFC), 0п-7 and FA / O of the above-mentioned amounts into polyethylene glycol 200 under continuous stirring, and stir until uniform to obtain 1000g Wire cutting fluid.

[0031] The polyethylene glycol in this embodiment has a low molecular weight, and the obtained wire cutting fluid is suitable for cutting semiconductor materials.

Embodiment 2

[0032] Embodiment 2: Prepare 1000 g of wire cutting fluid.

[0033] Take 840g of polyethylene glycol 600 (PEG600) in paste form, 100g of amine base-triethanolamine, 20g of penetrant-polyoxyethylene secondary alkyl alcohol ether (HJFC), 25g of ether alcohol active agent-0п-10, chelate Mixture-FA / O 15g.

[0034] Melt the paste-like polyethylene glycol 600 (PEG600) at a temperature of 40-60°C, and stir it under heat preservation, and slowly add the above-mentioned amounts of triethanolamine and polyoxyethylene secondary alkyl alcohol ether (HJFC) in sequence during continuous stirring , 0п-7 and FA / O, stirred until uniform to obtain 1000g wire cutting fluid.

[0035] The polyethylene glycol in this embodiment is still low molecular weight, and the obtained wire cutting fluid is suitable for cutting semiconductor materials.

Embodiment 3

[0036] Embodiment 3: Prepare 2000 g of wire cutting fluid.

[0037] Take solid polyethylene glycol 10000 (PEG10000) 900g, deionized water 600g, amine base-triethanolamine 400g, penetrant-polyoxyethylene secondary alkyl alcohol ether (HJFC) 40g, ether alcohol active agent-0-2030g , chelating agent-FA / O 30g.

[0038] Dissolve solid polyethylene glycol 10000 (PEG10000) in deionized water, slowly add the above-mentioned amount of triethanolamine, polyoxyethylene secondary alkyl alcohol ether (HJFC ), 0-20 and FA / O, stirred until uniform to obtain 2000g wire cutting fluid.

[0039] The polyethylene glycol in this embodiment has a high molecular weight, and the obtained wire cutting fluid is not only suitable for cutting semiconductor materials, but also suitable for cutting high-hardness materials, such as diamonds.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

A linear cutting liquid for semiconductor material is prepared from polyethanediol 10-10000, amine soda, penetrant, ether-alcohol as activating agent, chelating agent and deionized water. Its advantages are less corrosion to cutting wire, no filings deposit on the surface of Si chip, high penetrating, lubricating and cooling effect and low cost.

Description

technical field [0001] The invention belongs to cutting fluid, in particular to a wire cutting fluid for semiconductor materials. Background technique [0002] During the ingot slicing process, due to the strong mechanical force, the edge of the silicon wafer is prone to microcracks, chipping and stress concentration points, and the surface of the silicon wafer also has uneven stress distribution and damage. These defects are the cause of a large number of IC manufacturing. Slip lines, epitaxial stacking faults, slip dislocations, micro-defects and other secondary defects are important factors for the cracking of silicon wafers and chips. [0003] In recent years, the silicon single crystal substrate wire cutting process, which has been developing strongly in recent years, has shown its huge advantages compared with the inner diameter cutting process in many aspects such as the depth of damage on the surface of the silicon wafer, the consistency of the surface structure, and...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C10M107/32H01L21/304
Inventor 刘玉岭刘钠康静业周建伟王胜利
Owner 刘玉岭
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products