Wire cutting liquid of semiconductor material

A wire cutting and semiconductor technology, applied in the field of wire cutting fluid for semiconductor materials, can solve the problems of silicon chip surface damage, mechanical stress and thermal stress, etc., achieve low cost and price, facilitate cleaning and subsequent processing, and avoid chemical bonds The effect of co-adsorption

Inactive Publication Date: 2009-11-18
刘玉岭
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The present invention aims to solve the technical problem that the known wire cutting fluid has unsatisfactory effects in overcoming the surface damage, mechanical stress and thermal stress of the silicon wafer in the wire cutting process, and discloses a chemically effective, easy to clean, good heat dissipation effect, It has good penetration and lubricating effect, can significantly reduce the depth and stress of the damaged layer on the surface of silicon wafers, and is a cheap wire cutting fluid for semiconductor materials

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] Embodiment 1: Prepare 1000 g of wire cutting fluid.

[0030] Take polyethylene glycol 200 (PEG200) 880g, amine base-hydroxyethylethylenediamine 80g, penetrant-polyoxyethylene secondary alkyl alcohol ether (HJFC) 15g, ether alcohol active agent-Oп-7 15g, chelate Mixture-FA / O 10g.

[0031] Slowly add the above amounts of hydroxyethylethylenediamine, polyoxyethylene secondary alkyl alcohol ether (HJFC), Oп-7 and FA / O into polyethylene glycol 200 under continuous stirring, and stir until uniform to obtain 1000g Wire cutting fluid.

[0032] The polyethylene glycol in this embodiment has a low molecular weight, and the obtained wire cutting fluid is suitable for cutting semiconductor materials.

Embodiment 2

[0033] Embodiment 2: Prepare 1000 g of wire cutting fluid.

[0034] Take 840g of polyethylene glycol 600 (PEG600) in paste form, 100g of amine base-triethanolamine, 20g of penetrant-polyoxyethylene secondary alkyl alcohol ether (HJFC), 25g of ether alcohol active agent-Oп-10, chelate Mixture-FA / O 15g.

[0035] Melt the paste-like polyethylene glycol 600 (PEG600) at a temperature of 40-60°C, and stir it under heat preservation, and slowly add the above-mentioned amounts of triethanolamine and polyoxyethylene secondary alkyl alcohol ether (HJFC) in sequence during continuous stirring , Oп-7 and FA / O, stirred until uniform to obtain 1000g wire cutting fluid.

[0036] The polyethylene glycol in this embodiment is still low molecular weight, and the obtained wire cutting fluid is suitable for cutting semiconductor materials.

Embodiment 3

[0037] Embodiment 3: Prepare 2000 g of wire cutting fluid.

[0038] Take solid polyethylene glycol 10000 (PEG10000) 900g, deionized water 600g, amine base-triethanolamine 400g, penetrant-polyoxyethylene secondary alkyl alcohol ether (HJFC) 40g, ether alcohol active agent-Pingpingjia0 -2030g, chelating agent-FA / O 30g.

[0039] Dissolve solid polyethylene glycol 10000 (PEG10000) in deionized water, slowly add the above-mentioned amount of triethanolamine, polyoxyethylene secondary alkyl alcohol ether (HJFC ), add 0-20 and FA / O flatly, and stir until uniform to obtain 2000g wire cutting fluid.

[0040] The polyethylene glycol in this embodiment has a high molecular weight, and the obtained wire cutting fluid is not only suitable for cutting semiconductor materials, but also suitable for cutting high-hardness materials, such as diamonds.

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PUM

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Abstract

The invention relates to a wire cutting fluid for semiconductor materials. Its composition and weight % ratio are as follows: polyethylene glycol 10-10000: 35-90, amine base: 8-30, penetrating agent: 1-5, ether alcohols Active agent: 0.5-5, chelating agent: 0.5-5, deionized water: 0-55. The advantages of the present invention are: 1. The existing neutral or acidic wire cutting fluid is improved into an alkaline wire cutting fluid having a chemical interaction with silicon, which can avoid acid corrosion of equipment and reduce wire saw wire breakage rate. 2. It effectively solves the problem of re-deposition of chips and diced powder, avoids the phenomenon of chemical bonding and adsorption on the surface of silicon wafers, and facilitates the cleaning and subsequent processing of silicon wafers. 3. The effects of penetration, lubrication and cooling are remarkable, and the surface damage, mechanical stress, thermal stress and pollution of metal ions to silicon wafers of the obtained slices are significantly reduced. 4. The cost price is low, which is beneficial to replace the imported wire cutting fluid.

Description

technical field [0001] The invention belongs to cutting fluid, in particular to a wire cutting fluid for semiconductor materials. Background technique [0002] During the ingot slicing process, due to the strong mechanical force, the edge of the silicon wafer is prone to microcracks, chipping and stress concentration points, and the surface of the silicon wafer also has uneven stress distribution and damage. These defects are the cause of a large number of IC manufacturing. Slip lines, epitaxial stacking faults, slip dislocations, micro-defects and other secondary defects are important factors for the cracking of silicon wafers and chips. [0003] In recent years, the silicon single crystal substrate wire cutting process, which has been developing strongly in recent years, has shown its huge advantages compared with the inner diameter cutting process in many aspects such as the depth of damage on the surface of the silicon wafer, the consistency of the surface structure, and...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C10M107/32H01L21/304
Inventor 刘玉岭刘钠康静业周建伟王胜利
Owner 刘玉岭
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