Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Low-temperature polarizing electronic Raman scattering apparatus

A Raman scattering, low temperature technology, applied in the field of optics

Inactive Publication Date: 2005-07-27
NANJING UNIV
View PDF0 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, there is no such low-temperature polarized electron Raman scattering device in China.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Low-temperature polarizing electronic Raman scattering apparatus
  • Low-temperature polarizing electronic Raman scattering apparatus

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0015] A low-temperature polarized electron Raman scattering device according to the present invention, such as figure 1 shown. Among them: 1 is the argon ion laser, 2 is the collimating lens group, 3 is the plasma line filter, 4 is the spatial filter, 5 is the polarization rotator, 6 is the focusing lens, 7 is the mirror, 8 is the sample holder, 9 is the objective lens, 10 is the polarizer, 11 is the spectrometer, 12 is the monitor, 13 is the liquid helium cryostat, 14 is the plane mirror, 15 is the lens, 16 is the pinhole, 17 is the detector, 18 is the computer, 19 is Neutral density filter, 20 is a sample.

[0016] Argon ion laser 1 uses green light at 514nm. The laser light first enters a collimating lens group 2, which can be used to reduce the divergence of the laser light generated by the laser. The collimated laser light enters the plasma line filter 3, because the exiting laser also contains plasma lines of other wavelengths. The plasma filter is to ensure better m...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A Raman scattering device of low temperature polarization electron is featured as setting collimation lens set, plasma filter, space filter, polarization rotator and focal lens in sequence along operation path of argon ion laser; setting reflector behind focal lens to reflect laser beam on sample seat; having objective lens for collecting sample scattering light and polarization plate for selecting direction, setting spectrograph behind the polarization plate and connecting the spectrograph to monitor.

Description

1. Technical field [0001] The invention belongs to the field of optics, in particular to a low-temperature polarized electron Raman scattering device. 2. Background technology [0002] Raman scattering is a common phenomenon of inelastic light scattering. When a beam of light hits the sample, part of it is reflected, and the other part is refracted into the sample. This part of the light entering the sample can interact with various excitation processes in the material. After the interaction, the photons transfer momentum and energy to the sample. The internal excitation produces scattered light emission. In this way, the scattered light carries rich information about the various excitations inside the material. By detecting the scattering spectrum, the intrinsic fundamental properties of the material can be studied in depth. The scattering process here is Raman scattering. [0003] Raman scattering technology has been widely used in modern scientific research and indust...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G01N21/65
Inventor 张清明王业宁安明杨震元世魁吴勇
Owner NANJING UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com