Electro-optical device, method of manufacturing the same, and electronic apparatus

Abstract

A light-shielding film formed above a substrate has a multilayered thin film structure, in which a thin film not containing nitrogen and a thin film containing nitrogen are alternately arranged. Since the thin film containing nitrogen is formed in the light-shielding film, the stress caused by thermal distortion at the time of an annealing treatment is absorbed by the thin film containing nitrogen. Thus, cracks in an insulating film or a semiconductor film which extend from the light-shielding film can be prevented from occurring.

Description

technical field [0001] The present invention relates to an electro-optic device in which a light-shielding film is formed into a multilayer structure by sputtering on a substrate, a method for manufacturing the electro-optic device, and electronic equipment. Background technique [0002] In general, an electro-optical device, for example, a liquid crystal device in which liquid crystal is used as an electro-optic substance to perform a predetermined display, is configured such that liquid crystal is sandwiched between a pair of substrates. Among them, in an electro-optical device such as a liquid crystal device of an active matrix driving method such as TFT drive and TFD drive, each intersection point of a plurality of scanning lines (gate lines) and data lines (source lines) arranged vertically and horizontally is , On a substrate (active matrix substrate), a pixel electrode and a switching element are provided. [0003] A switching element such as a TFT element is turned ...

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Problems solved by technology

[0009] However, when the crystal structure of the alloy is formed by the silicidation reaction, the internal stress gradually increases

As a result, in the state where the light-shielding film (WSi) or the interlayer insulating film (NSG) is laminated on the TFT substrate, or the semiconductor layer (polysilicon) is laminated in addition, if an annealing treatment is further performed, it will recover after the treatment. In the process of normal temperature, stress caused by thermal strain occurs between tungsten silicide (WSi) as the material of the light-shielding film and NSG as the material of the interlayer insulating film or polysilicon as the material of the semiconductor layer, and it is easy to start from the light-shielding film Cracks are generated in the interlayer insulating film (NSG)

[0010] If a crack occurs in the interlayer insulating film (NSG), then, starting from this crack, the crack spreads to the surrounding area such as the semiconductor layer, and component defects such as short circuit or open circuit are likely to occur, and the yield of the product decreases.

[0011] As a countermeasure for this, although it is conceivable to reduce the pattern of the light-shielding film, or reduce the internal stress by making it thinner, it is not practical because light leaks easily into the channel region of the TFT element part or its surrounding region.

In addition, although it is conceivable to reduce the film thickness of the light-shielding film, it is not only impossible to obtain sufficient light-shielding properties, but also because the change in film thickness tends to cause steps between other layers, so this is also not feasible.

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