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Method for producing flash memory storing unit

A flash memory storage and manufacturing method technology, applied in the field of flash memory storage cells and their manufacturing, can solve problems such as damage to the dielectric layer and affect the performance of the storage cells, and achieve the improvement of gate coupling rate, component integration, and component performance. Effect

Inactive Publication Date: 2005-09-28
POWERCHIP SEMICON CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0013] However, in the process of removing the bottom dielectric layer, part of the dielectric layer on the sidewall will also be removed, thereby causing damage to the dielectric layer on the sidewall and affecting the performance of the memory cell.

Method used

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  • Method for producing flash memory storing unit
  • Method for producing flash memory storing unit
  • Method for producing flash memory storing unit

Examples

Experimental program
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Embodiment Construction

[0051] Please refer to Figure 3A to Figure 3J , which is a flowchart of a method for manufacturing a flash storage unit according to a preferred embodiment of the present invention.

[0052] First please refer to Figure 3A A substrate 300 is provided. At least one device isolation structure has been formed on the substrate 300. The device isolation structure is a stripe layout and defines an active region. Wherein, the method for forming the device isolation structure is, for example, Local Oxidation (LOCOS) or Shallow Trench Isolation (STI).

[0053] Next, a thicker dielectric layer 301 is formed on the surface of the substrate 300. The material of the dielectric layer 301 is, for example, silicon oxide, and its formation method is, for example, chemical vapor deposition (Chemical Vapor Deposition, CVD). In addition, in another preferred embodiment, a thinner lining layer (not shown) may also be formed on the surface of the substrate 300 , and the forming method is, for e...

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PUM

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Abstract

A method for preparing flash memory storage cell includes forming patterning mask layer on substrate, using formed mask to each substrate to make slot on substrate, forming the first grid / the second grid at slot side wall then forming the first source area / drain area at slot bottom after the first dielectric layer being formed, forming the second dielectric layer and passivation layer on it, moving off these layers, filling the third grid full of slots, moving mask layer off, forming the third dielectric layer then forming the fourth and fifth grids and forming the second source area / drain area in substrate.

Description

technical field [0001] The invention relates to a semiconductor element and its manufacturing method, and in particular to a flash storage unit and its manufacturing method. Background technique [0002] The flash memory element has the advantage that information can be stored, read, and erased multiple times, and the stored information will not disappear after power off. Therefore, it has become a non-volatile storage element widely used in personal computers and electronic equipment. [0003] A typical flash memory element uses doped polysilicon to make a floating gate (Floating Gate) and a control gate (Control Gate) (stacked gate structure). Moreover, the floating gate is separated from the control gate by an inter-gate dielectric layer, and the floating gate is separated from the substrate by a tunnel oxide layer (Tunnel Oxide). [0004] When performing an operation of writing information into the flash memory, a bias voltage is applied to the control gate and the sou...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/8247H10B20/00H10B99/00
Inventor 黄明山王炳尧
Owner POWERCHIP SEMICON CORP