Power bipolar transistor with base local heavy saturation

A bipolar transistor and heavy doping technology, which is applied in the direction of transistors, semiconductor devices, electrical components, etc., can solve the problems of Auger recombination enhancement, emission zone doping band gap narrowing, and decline, so as to achieve performance improvement and improvement Effect of performance and current gain increase
CN1722460AInactive Publication Date: 2006-01-18UNIV OF ELECTRONIC SCI & TECH OF CHINA
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Patent Information

Authority / Receiving Office
CN Β· China
Current Assignee / Owner
UNIV OF ELECTRONIC SCI & TECH OF CHINA
Publication Date
2006-01-18
Estimated Expiration
Not applicable Β· inactive patent

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Abstract

This invention relates to a bipolar transistor with base partially heave doping horsepower, characterized by partially heave doping on the base 5 of the present power bipolar transistor to form heave base 9, the doping type of heave base 9 is the same with the base 5( P type or N type), and its density is larger than that of base 5, the heave base 9 is located in the base 5 under the base electrode 1, and close contacting with the base electrode 1. Compared with the nominal power bipolar transistor, the invention can largely improve the current gain of the device.
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Description

technical field

[0001] The invention belongs to the technical field of semiconductor power devices, and particularly relates to power bipolar transistors. Background technique

[0002] The increasingly wide application of modern power integrated circuits puts forward higher requirements on the performance of power devices. As we all know, one of the most important semiconductor power devices, the power bipolar transistor, is currently a key device in such aspects as power systems, rockets and satellites, and modern communications. Numerous books and literature have been written on the subject of bipolar transistor physics, design, and applications. How to increase the current gain of bipolar transistors has always been an important topic in the research of bipolar transistors. figure 1 It is a schematic diagram of the structure of a conventional power bipolar transistor. Among them, 1 is the base electrode, 2 is the emitter electrode, 3 is the collector electrode, 4 is th...

Claims

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