Power bipolar transistor with base local heavy saturation

A bipolar transistor and heavy doping technology, which is applied in the direction of transistors, semiconductor devices, electrical components, etc., can solve the problems of Auger recombination enhancement, emission zone doping band gap narrowing, and decline, so as to achieve performance improvement and improvement Effect of performance and current gain increase

Inactive Publication Date: 2006-01-18
UNIV OF ELECTRONIC SCI & TECH OF CHINA
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Problems solved by technology

However, excessive doping in the emitter region will narrow the forbidden band and enhance Auger recombination, which will not only fail to

Method used

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  • Power bipolar transistor with base local heavy saturation
  • Power bipolar transistor with base local heavy saturation
  • Power bipolar transistor with base local heavy saturation

Examples

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Example Embodiment

[0039] A manufacturing process of the power bipolar transistor with locally heavily doped base region of the present invention is as follows (take a trench bipolar NPN tube as an example):

[0040] 1) The wafer used is heavily doped with N + Substrate 7;

[0041] 2) In heavily doped N + Make N- / P / N sequentially on substrate 7 + Epitaxial layer (different current gain and withstand voltage value of the device, the size of the epitaxial layer will be different);

[0042] 3) Use reactive ion etching (RIE) process to etch away N + Layer to P layer, forming a trench structure of a bipolar transistor;

[0043] 4) A heavily doped base region 9 is formed in the trench structure of the bipolar transistor according to the requirements of the device current gain;

[0044] 5) Oxidation, a high-quality oxide layer is formed on the surface of the bipolar transistor groove;

[0045] 6) Depositing silicon dioxide, filling the grooves, and planarizing the device;

[0046] 7) Use conventional metho...

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Abstract

This invention relates to a bipolar transistor with base partially heave doping horsepower, characterized by partially heave doping on the base 5 of the present power bipolar transistor to form heave base 9, the doping type of heave base 9 is the same with the base 5( P type or N type), and its density is larger than that of base 5, the heave base 9 is located in the base 5 under the base electrode 1, and close contacting with the base electrode 1. Compared with the nominal power bipolar transistor, the invention can largely improve the current gain of the device.

Description

technical field [0001] The invention belongs to the technical field of semiconductor power devices, and particularly relates to power bipolar transistors. Background technique [0002] The increasingly wide application of modern power integrated circuits puts forward higher requirements on the performance of power devices. As we all know, one of the most important semiconductor power devices, the power bipolar transistor, is currently a key device in such aspects as power systems, rockets and satellites, and modern communications. Numerous books and literature have been written on the subject of bipolar transistor physics, design, and applications. How to increase the current gain of bipolar transistors has always been an important topic in the research of bipolar transistors. figure 1 It is a schematic diagram of the structure of a conventional power bipolar transistor. Among them, 1 is the base electrode, 2 is the emitter electrode, 3 is the collector electrode, 4 is th...

Claims

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Application Information

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IPC IPC(8): H01L29/36H01L29/73
Inventor 张波陈万军易坤陈林李肇基
Owner UNIV OF ELECTRONIC SCI & TECH OF CHINA
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