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Semiconductor device miniature radiator

A technology for semiconductors and heat sinks, applied in the field of micro heat sinks for semiconductor devices, can solve the problems of expensive processing equipment, difficult production costs, complicated processes, etc., and achieve the effects of easy physical deposition method, good heat dissipation effect, and wide application range.

Inactive Publication Date: 2006-02-08
SHANGHAI JIAO TONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the processing equipment required for this kind of micro radiator is expensive, the process is extremely complicated, and the production cost is unacceptable, so the practical application is greatly restricted.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0013] The invention is composed of a single metal layer, the single metal layer is a Cu metal layer, and the Cu metal layer is a micro-nano needle crystal array structure.

[0014] The needle-shaped crystals have a height of 0.05-0.4 microns and a bottom diameter of 0.05-0.2 microns. It has been determined that the heat dissipation effect of the heat sink is higher than that of the copper plate heat sink usually pasted on the back of the chip.

Embodiment 2

[0016] The present invention is composed of two layers of single metal, the bottom layer is a Cu metal layer, and above the Cu metal layer is a Ni metal layer, and the two metal layers are bonded by metal, and the Ni metal layer is a micro-nano needle crystal cloth array structure.

[0017] The needle-shaped crystals have a height of 0.05-0.4 microns and a bottom diameter of 0.05-0.2 microns. It has been determined that the heat dissipation effect of the heat sink is higher than that of the copper plate heat sink usually pasted on the back of the chip.

Embodiment 3

[0019] The present invention is composed of two layers of single metal, the bottom layer is a Ni metal layer, and above the Ni metal layer is an Au metal layer, and the two metal layers are bonded by a metal bond, and the Ni metal layer is a micro-nano needle crystal cloth array structure.

[0020] The acicular crystals have a height of 0.4-0.8 microns and a bottom diameter of 0.1-0.3 microns. It has been determined that the heat dissipation effect of the heat sink is much higher than that of the copper plate heat sink usually pasted on the back of the chip.

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Abstract

Disclosed is a semiconductor micro radiator. The invention comprises one or more metal layers that comprises monometal layer or alloy layer. The monometal can be one of Cu, Ni, Co, Fe, Sn, Cr, Al, Ag, Au, Pd or Pt. the said alloy comprises two or more said monometal. At least one layer of said monometal layer or alloy layer is micro nanometer needle-shaped crystal, if more than one metal layers, then metal layers are combined with metallic bonds. The present invention has the advantages of simple structure, good radiation and high radiation efficiency.

Description

technical field [0001] The invention relates to a device in the technical field of semiconductor microelectronics, in particular to a miniature heat sink for semiconductor devices. Background technique [0002] Semiconductor microelectronic devices represented by chips, with the continuous improvement of integration and the gradual reduction of volume, the geometric size of electronic equipment that originally occupied a large space is reduced by orders of magnitude, but the volume heat flux increases The trend is extremely rapid, and the heat flux required for cooling of today's ultra-large-scale integrated circuits (ULSI) has reached the order of magnitude of the core heat flux of a light water furnace reactor. As far as the computer field is concerned, the heat generation of the CPU has increased from more than a dozen watts a few years ago to 70-80W, and the heat flux conducted through the radiator substrate has reached as high as 10W. 4 ~10 5 w / m 2 . For microelectr...

Claims

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Application Information

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IPC IPC(8): H01L23/36G06F1/20
Inventor 李明凌惠琴汪红毛大立
Owner SHANGHAI JIAO TONG UNIV