Leak detector and process gas monitor

A detector and gas analyzer technology, used in the field of monitoring the status of flat panel display process systems, and can solve problems such as damage

Inactive Publication Date: 2006-05-03
APPLIED MATERIALS INC
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Problems solved by technology

And usually add 20%-30% extra cleaning time to the cleaning cycle, without considering the damage that these extra cleaning time may cause to the reaction chamber and the components in the reaction chamber

Method used

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  • Leak detector and process gas monitor
  • Leak detector and process gas monitor

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Embodiment Construction

[0027] figure 1 A schematic cross-sectional view of one embodiment of a plasma-enhanced chemical vapor deposition system 100, commercially available from AKT, a division of Applied Materials, Inc., of Santa Clara, California, is shown. The system 100 includes a vacuum deposition reaction chamber 133 , the reaction chamber 133 has a chamber wall 106 and a bottom 108 , and the chamber wall 106 and the bottom 108 partially define a process region 141 . The cavity wall 106 and the bottom 108 are usually made of a single piece of aluminum or other process compatible materials. The chamber wall 106 has an opening 142 for transferring a flat panel display substrate into or out of the reaction chamber 133 . Specific examples of flat panel display substrates include glass substrates, polymer substrates, and other similar substrates. Although embodiments of the present invention are described with reference to a PECVD system, other embodiments of the present invention are also applica...

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Abstract

A method and apparatus for a plasma-enhanced chemical vapor deposition system for processing one or more flat panel display substrates, the apparatus comprising a vacuum deposition chamber for containing gas, a chamber for analyzing the gas in the reaction chamber and providing A feedback residual gas analyzer and a controller for monitoring feedback from the gas analyzer. A method for identifying process disturbances in a plasma-enhanced chemical vapor deposition system for processing one or more flat panel display substrates, the method comprising: determining the past slope of a partial pressure curve as a function of time; calculating a new slope of the curve from partial pressure measurements taken by the residual gas analyzer; comparing the past slope to the new slope; and sending a signal to an operator.

Description

technical field [0001] Embodiments of the present invention relate to processes and methods for flat panel displays and semiconductor wafers, and in particular to methods and systems for monitoring the state of a flat panel display process system. Background technique [0002] Chemical vapor deposition (CVD) is widely used in the semiconductor industry to deposit on a substrate, such as intrinsic or doped amorphous silicon (a-Si), silicon oxide (SixOy), silicon nitride (SirNs) and silicon oxynitride films. The modern semiconductor CVD process is usually carried out in a vacuum chamber, which utilizes the decomposition and reaction of the precursor gas to form the desired film. During deposition, plasmas are formed from these precursor gases in the vacuum chamber in order to deposit thin films at low temperatures and relatively high deposition rates. These processes are known as plasma enhanced chemical vapor deposition, or PECVD. However, other systems such as high densit...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/52
CPCC23C16/4401C23C16/52H01J37/32935H01J37/3299H01L21/67253
Inventor 塞缪尔·梁乌尔里希·A·邦内
Owner APPLIED MATERIALS INC
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