Method for producing phase change memory unit capable of reducing write operation current
A technology of phase-change memory and write operation, which is applied in the field of microelectronics, and can solve the problems of not breaking through the complete lithography limitation, thermal limitation and electrical limitation.
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Embodiment 1
[0028] a. Choose a low-resistance type (111) silicon wafer, first use acetone to ultrasonically remove the surface organic matter, and then use concentrated H 2 SO 4 :H 2 o 2 : 1:1 heating to 100±10 degrees for about 5 minutes, then rinse and dry with deionized water, then put the silicon wafer into 10:1 water:HF solution for 20+2 seconds to remove surface oxide , then rinse and dry with deionized water, and then put the silicon wafer into NH 4 OH:H 2 o 2 :H 2 O=1:2:5 volume ratio of No. I solution was boiled for 5 minutes, then rinsed with deionized water and dried, and then put the silicon wafer into HCL:H 2 o 2 :H 2 The No. II liquid with a volume ratio of O=1:2:8 was boiled for 10 minutes, then rinsed and dried with deionized water.
[0029] b. Magnetron sputtering lower electrode materials on the substrate, such as TiN, W, Pt, etc.; (such as Figure 4 ).
[0030] c. Depositing a dielectric layer on the electrode material.
[0031] d. Photolithographic hole sha...
Embodiment 2
[0036] a. Choose a low-resistance type (111) silicon wafer, first use acetone to ultrasonically remove the surface organic matter, and then use concentrated H 2 SO 4 :H 2 o 2 : 1:1 heating to 100±10 degrees for about 5 minutes, then rinse and dry with deionized water, then put the silicon wafer into 10:1 water:HF solution for 20+2 seconds to remove surface oxide , then rinse and dry with deionized water, and then put the silicon wafer into NH 4 OH:H 2 o 2 :H 2 O=1:2:5 volume ratio of No. I solution was boiled for 5 minutes, then rinsed with deionized water and dried, and then put the silicon wafer into HCL:H 2 o 2 :H 2 The No. II liquid with a volume ratio of O=1:2:8 was boiled for 10 minutes, then rinsed and dried with deionized water.
[0037] b. Magnetron sputtering lower electrode materials on the substrate, such as TiN, W, Pt, etc.; (such as Figure 4 ).
[0038] c. Depositing a dielectric layer on the electrode material.
[0039] d. use FIB technology to open...
Embodiment 3
[0043] a. Choose a low-resistance type (111) silicon wafer, first use acetone to ultrasonically remove the surface organic matter, and then use concentrated H 2 SO 4 :H 2 o 2: 1:1 heating to 100±10 degrees for about 5 minutes, then rinse and dry with deionized water, then put the silicon wafer into 10:1 water:HF solution for 20±2 seconds to remove surface oxide , then rinse and dry with deionized water, and then put the silicon wafer into NH 4 OH:H 2 o 2 :H 2 O=1:2:5 volume ratio of No. I solution was boiled for 5 minutes, then rinsed with deionized water and dried, and then put the silicon wafer into HCL:H 2 o 2 :H 2 The No. II liquid with a volume ratio of O=1:2:8 was boiled for 10 minutes, then rinsed and dried with deionized water.
[0044] b. Magnetron sputtering lower electrode materials on the substrate, such as TiN, W, Pt, etc.; (such as Figure 4 ).
[0045] c. Depositing a dielectric layer on the electrode material.
[0046] d. use mechanical embossing te...
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