Electro-luminescent porous silica material and its preparation method

Abstract

The invention relates to an electroluminescence porous silicon and relative preparation method, belonging to the electroluminescence porous silicon technique. Said invention is formed by a silicon base; a porous silicon layer above one side of silicon base; and a silicon line layer above porous silicon layer whose average diameter is 200-500 nanometers and length is 2-10 microns. The preparation method comprises: putting the washed silicon plate into the water solution of fluohydric acid and silver nitrate to be chemical etched; putting the etched silicon plate into the water solution of fluohydric acid and ethanol to be electrical chemical etched to attain the electroluminescence porous silicon. The invention has simple preparation process, and the electroluminescence porous silicon has a silicon line layer above the porous silicon layer with higher lighting ability than present electroluminescence porous silicon.

Description

Technical field:

[0001] The invention relates to electroluminescent porous silicon and a preparation method thereof, belonging to the technology of electroluminescent porous silicon materials. Background technique:

[0002] Porous silicon is a silicon-based nanoluminescent material. It has been widely studied by scientists at home and abroad due to its advantages of easy integration with existing silicon chips, low development cost, uniform light emission, and multi-color. It has become a silicon-based material since the 1990s. The main representative of nano-luminescent materials.

[0003] The porous silicon structure prepared by the traditional method is a common porous columnar loose structure. There are mainly the following methods for preparing the porous silicon with common structure and visible light emission performance: 1) Electrochemical anodic oxidation method. For example, in 1990, L.T.Canham first used silicon wafers as raw materials to prepare porous silicon ...

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