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Prepn process of SiN ceramic with high heat conductivity

A technology of silicon nitride ceramics and high thermal conductivity, which is applied in the preparation of high thermal conductivity silicon nitride ceramics, low-temperature rapid sintering to prepare high thermal conductivity silicon nitride ceramics, can solve the problems that have not yet been seen in high thermal conductivity silicon nitride ceramics, and achieve Excellent thermal effect

Inactive Publication Date: 2006-08-02
SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

So far, there has been no report on the preparation of silicon nitride ceramics with high thermal conductivity by SPS low-temperature rapid sintering method using nitride alone as a sintering aid.

Method used

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  • Prepn process of SiN ceramic with high heat conductivity
  • Prepn process of SiN ceramic with high heat conductivity

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] Add 3wt% sintering aid MgSiN 2 After the powder is evenly mixed, it is then loaded into a graphite mold, and SPS is sintered under the conditions of 60MPa, 1500°C, and a holding time of 12 minutes. After sintering, the samples were cooled to room temperature with the furnace.

[0022] The thermal conductivity of silicon nitride ceramics prepared by the above process can reach 100W / m K, and the three-point flexural strength σ b Up to 946MPa, Vickers hardness is 17GPa, fracture toughness is 7.41MPam 1 / 2 . The corrosion morphology of the polished surface is as follows: figure 2 shown.

Embodiment 2

[0024] Add 5wt% sintering aid MgSiN 2 After the powder is evenly mixed, it is then loaded into a graphite mold, and SPS is sintered under the conditions of 30MPa, 1550°C, and a holding time of 12 minutes. After sintering, the samples were cooled to room temperature with the furnace.

[0025] The thermal conductivity of silicon nitride ceramics prepared by the above process can reach 112W / m K, and the three-point flexural strength σ b 800MPa, Vickers hardness 16.5GPa, fracture toughness 7.68MPam 1 / 2 .

Embodiment 3

[0027] Add 9wt% sintering aid MgSiN 2 After the powder is uniformly mixed, it is then loaded into a graphite mold, and SPS is sintered under the conditions of 20MPa, 1550°C, and a holding time of 5 minutes. After sintering, the samples were cooled to room temperature with the furnace.

[0028] The thermal conductivity of silicon nitride ceramics prepared by the above process can reach 63W / m K, and the three-point flexural strength σ b is 900MPa.

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Abstract

The preparation process of Si3N4 ceramic with high heat conductivity features the SPS low temperature quick sintering with nitride as sintering assistant to prepare Si3N4 ceramic with high heat conductivity as one kind one non-oxide ceramic. The Si3N4 ceramic with high heat conductivity is prepared with alpha Si3N4 powder and sintering assistant in the ratio of 100 to 2-10, and through mixing and SPS low temperature quick sintering. During the preparation, the material is filled into graphite mold and quickly SPS sintered at 10-100 MPa pressure and 1500-1700 deg.c for 3-30 min. The Si3N4 ceramic has high heat conductivity up to 120W / m.K and high strength including three point breaking strength over 750 MPa.

Description

technical field [0001] The present invention relates to a method for preparing silicon nitride ceramics with high thermal conductivity, more precisely, a method for preparing silicon nitride ceramics with high thermal conductivity by low-temperature rapid sintering of spark plasma sintering (SPS) using nitride powder as a sintering aid. The invention belongs to the field of preparation of non-oxide ceramics. Background technique [0002] In recent years, in the process of researching high thermal conductivity ceramic substrate materials, it was found that Si 3 N 4 Fits Slack's characterization of materials with high thermal conductivity. Haggerty and Lightfoot According to Si 3 N 4 The structure of the proposed β-Si 3 N 4 Its theoretical thermal conductivity is as high as 200-320W / m K, and it also has very excellent properties such as thermal expansion coefficient close to that of single crystal Si, good electrical insulation, and non-toxic. It is an ideal heat dissipa...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/584C04B35/622
Inventor 彭桂花江国健李文兰张宝林庄汉锐徐素英
Owner SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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