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Mems device and manufacturing method of mems device

A manufacturing method and component technology, applied in the field of MEMS components, can solve the problems of damage to wiring 105, poor humidity resistance, and reduced reliability of MEMS components 100, and achieve the effects of improved reliability and good humidity resistance

Inactive Publication Date: 2006-08-23
SEIKO EPSON CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] However, in such a manufacturing process, the interlayer insulating films 104 and 106 are also etched simultaneously by isotropic etching for releasing the structure 110, and the wiring 105 may be etched to cause damage to the wiring 105.
At this time, although it is also considered to arrange the wiring 105 at the position where etching is not performed, this will reduce the integration degree of the MEMS element 100.
In addition, since the opening 111 of the MEMS element 100 configured in this way exposes the interlayer insulating films 104 and 106, the moisture resistance is poor, and the reliability of the MEMS element 100 is significantly reduced.

Method used

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  • Mems device and manufacturing method of mems device
  • Mems device and manufacturing method of mems device

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Experimental program
Comparison scheme
Effect test

no. 1 approach

[0048] figure 1 It is a schematic configuration diagram showing an embodiment of a MEMS resonator as a MEMS element of the present invention. in, figure 1 (a) is a top view of the MEMS element, figure 1 (b) is a cross-sectional view along the line A-A of (a) in this figure.

[0049] exist figure 1 In the MEMS element 1, a structure 18 consisting of a movable electrode 15 and fixed electrodes 16a, 16b made of polysilicon is formed on a semiconductor substrate 10 made of silicon. An n-type lower electrode 13 is formed on the semiconductor substrate 10 to be electrically connected to the structure 18 . In addition, an insulating film 11 which is a thermally oxidized film formed on the semiconductor substrate 10 is formed on a peripheral portion facing the structure 18, and an interlayer insulating film 20, wiring 21, and interlayer insulating film 22 are sequentially stacked thereon. . The wiring 21 is made of Al, Cu, or the like, and is connected to the lower electrode...

no. 2 approach

[0056] Next, a method of manufacturing the MEMS element 1 will be described. For the manufacture of this MEMS component, a semiconductor CMOS process is used.

[0057] figure 2 , image 3 , Figure 4 It is a schematic cross-sectional view showing the manufacturing process of the MEMS element 1 .

[0058] First, in figure 2 In (a), a thermal oxide film (SiO 2 film), that is, an insulating film 11, on which a photoresist is applied to form a photoresist film 12. Then, the photoresist film 12 is patterned into a predetermined shape. Thereafter, if figure 2 As shown in (b), P ions are implanted from above the patterned semiconductor substrate 10 to form an n-type lower electrode 13 on the semiconductor substrate 10 . Next, the photoresist film 12 is removed, a photoresist is applied again, and patterning is performed to remove a part of the insulating film 11 above the lower electrode 13 . Then, if figure 2 As shown in (c), part of the insulating film 11 is etched up...

no. 3 approach

[0072] Figure 6 It is a schematic configuration diagram showing another embodiment of a MEMS resonator as a MEMS element of the present invention. Figure 6 (a) is a top view of the MEMS element, Figure 6 (b) is a sectional view along the line B-B of (a) in this figure.

[0073] exist Figure 6 In the MEMS element 2, a structure body 50 composed of an upper structure body 49 and a lower structure body 44 is formed on a semiconductor substrate 40 made of silicon through a nitride film 41. The upper structure body 49 and the lower structure body 44 are made of polysilicon constitute. The upper structure 49 and the lower structure 44 each function as an electrode, and are arranged to overlap a part of the upper structure 49 in the thickness direction with a constant interval above the lower structure 44 .

[0074] In addition, in the peripheral portion facing the structure 50, interlayer insulating films 45, 51, wiring lines 52, 53, and interlayer insulating film 54 are seq...

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Abstract

A MEMS device includes a wiring laminated through an interlayer insulating film on a semiconductor substrate, the interlayer insulating film partially opened up to an upper portion of the substrate, and a structure disposed in the opening, wherein on a sidewall of the interlayer insulating film exposed in the opening that faces the structure and on a surface of the uppermost layer of the interlayer insulating film, a silicon nitride film is formed.

Description

technical field [0001] The present invention relates to a MEMS element provided with a structure on a semiconductor substrate and a method of manufacturing the MEMS element. Background technique [0002] In recent years, using MEMS (Micro Electro Mechanical System, Micro Electro Mechanical System) technology, sensors, resonators, communication devices, and the like that include MEMS elements on semiconductor substrates are attracting attention. MEMS components are functional components composed of tiny structures fabricated on semiconductor substrates using semiconductor manufacturing processes. This structure includes a movable part (movable electrode) and a fixed part (fixed electrode) of a single cantilever beam or double cantilever beam structure deformed by an external force such as electrical force or acceleration. For example, a MEMS element including a comb-tooth-shaped movable electrode and a comb-tooth-shaped fixed electrode as shown in Patent Document 1 is known....

Claims

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Application Information

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IPC IPC(8): B81B3/00B81C1/00
Inventor 稻叶正吾佐藤彰
Owner SEIKO EPSON CORP
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