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Doped rare earth element gallium oxide type fluorescent substrate material and its prepn. method

A technology of fluorescent substrates and rare earth elements, which is applied in the direction of luminescent materials, chemical instruments and methods, and climate sustainability, can solve the problems of obtaining yellow light emission, waste of raw materials, and increasing the volume of devices, and achieves a simple preparation process, The effect of small lattice mismatch and simplified preparation process

Inactive Publication Date: 2006-09-13
SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] (2)α-Al 2 o 3 Unable to realize the transition from blue light to yellow light;
[0010] (3)α-Al 2 o 3 The substrate is non-conductive, making the device difficult to manufacture, and it also increases the volume of the device, resulting in a lot of waste of raw materials;
[0011] (4) Yellow light emission cannot be obtained by means of electric excitation

Method used

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  • Doped rare earth element gallium oxide type fluorescent substrate material and its prepn. method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0048] According to the above process step , weigh the dry 0.0999mol Ga 2 o 3 and 0.0002mol of CeO 2 . According to step , mix the raw materials evenly. According to step , the raw material is pressed into a raw material rod 10 under an isostatic pressure of 10-100 MPa. According to step , the raw material rod 10 was sintered at a temperature of 1450° C. for 12 hours. Install the raw material rod 10 and the a-axis seed crystal 7 in the floating zone furnace according to step . According to step , the raw material rod 10 is melted by means of infrared lamp 4 heating; the growth atmosphere is N 2 +O 2 , N / (O+N)=10%. The growth rate of the crystal is 5mm / hr, the rotational speed of the crystal is 10rpm, and the growth temperature of the crystal is 1750°C. After the crystals go through the processes of inoculation, necking, shouldering, equal necking, closing, and cooling, the growth ends. According to step put the crystal in N 2 Annealing treatment under the atmosphere...

Embodiment 2

[0050] According to embodiment one process step , take by weighing the Ga of the dry 0.099mol that purity is 99.999% 2 o 3 and 0.001mol of CeO 2 . Steps in Example 1 were repeated, and the raw material rod 10 and a-axis seed crystal 7 were installed in the floating zone furnace according to step . According to step , the raw material rod 10 is melted by means of infrared lamp 4 heating; the growth atmosphere is N 2 +O 2 , N / (O+N)=50%. The growth rate of the crystal is 5mm / hr, the rotational speed of the crystal is 10rpm, and the growth temperature of the crystal is 1750°C. After the crystals go through the processes of inoculation, necking, shouldering, equal necking, closing, and cooling, the growth ends. According to step put the crystal in N 2 Annealing treatment under the atmosphere, the annealing temperature is 1000 ℃, keep warm for 30 hours. The heating or cooling rate is 50°C / hr. The obtained crystals are processed and grown in the epitaxial growth suitable...

Embodiment 3

[0052] According to embodiment one process step , take by weighing the Ga of the dry 0.099mol that purity is 99.999% 2 o 3 and 0.002mol of CeO 2 . Steps in Example 1 were repeated, and the raw material rod 10 and a-axis seed crystal 7 were installed in the floating zone furnace according to step . According to step , the raw material rod 10 is melted by means of infrared lamp 4 heating; the growth atmosphere is N 2 +O 2 , N / (O+N)=90%. The growth rate of the crystal is 5mm / hr, the rotational speed of the crystal is 10rpm, and the growth temperature of the crystal is 1750°C. After the crystals go through the processes of inoculation, necking, shouldering, equal necking, closing, and cooling, the growth ends. According to step put the crystal in N 2 Annealing treatment under the atmosphere, the annealing temperature is 1300 ℃, keep warm for 30 hours. The heating or cooling rate is 50°C / hr. The obtained crystals are processed and grown in the epitaxial growth suitable...

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Abstract

This invention relates to dope rare earth element gallium oxide fluorescence substrate material used to GaInN group blue light semiconductor epitaxial growth and its preparation method. The substrate single crystal molecular formula is beta-Ga2-2x(RE)2xO3, the RE equals to Ce or Tm, x equals to 0.001 to 0.1. The crystal grows by floating zone method. The substrate is propitious to epitaxial growth high quality GaInN group blue semiconductor film, LED can emit white light by it combine with GaInN group blue light.

Description

technical field [0001] The invention relates to a rare earth element-doped gallium oxide β-Ga which can be used to prepare GaInN-based white light semiconductor diodes 2-2x (RE) 2x o 3 (RE=Ce, Tm) yellow fluorescent substrate material and its preparation method. Background technique [0002] Currently used light sources are mainly incandescent lamps and fluorescent lamps. Incandescent lamps and fluorescent lamps have the advantages of low price, easy preparation, etc., and the preparation technology is mature. However, incandescent lamps have a short life; fluorescent lamps have low luminous efficiency, and a large amount of electric energy is consumed in the form of heat. Because light-emitting diodes (hereinafter referred to as LEDs) directly convert electrical energy into light energy, they have high efficiency, small size, long life, and low price. Monochromatic light-emitting diodes (LEDs) such as red, yellow, green, and blue have been commercialized. Monochromati...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/80
CPCY02B20/181Y02B20/00
Inventor 夏长泰张俊刚徐军周国清吴锋裴广庆吴永庆
Owner SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
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