Electro-static chuck with non-sintered aln and a method of preparing the same

An electrostatic chuck, non-sintering technology, applied in the manufacture of circuits, electrical components, semiconductor/solid-state devices, etc., can solve the problems of poor bonding and arching of bonding parts, achieve low porosity, reduce residual stress, high The effect of static electricity

Inactive Publication Date: 2006-11-15
SNT CO LTD
View PDF0 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In these cases, however, there is the problem that the bond between the block and the substrate is very poor and doming may occur during handling due to inhomogeneities at the bonding site

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Electro-static chuck with non-sintered aln and a method of preparing the same
  • Electro-static chuck with non-sintered aln and a method of preparing the same
  • Electro-static chuck with non-sintered aln and a method of preparing the same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0028] The present invention seeks to provide an electrostatic chuck having non-sintered aluminum nitride in which the dielectric layer is formed from a coating of non-sintered aluminum nitride.

[0029] Now, an electrostatic chuck having non-sintered aluminum nitride according to the present invention will be described in detail with reference to the accompanying drawings.

[0030] In a preferred embodiment, an electrostatic chuck with non-sintered aluminum nitride (AlN) according to the present invention includes a substrate 20 , an insulator 15 , an n-electrode 30 and a dielectric 10 .

[0031] figure 1 with figure 2 A cross-sectional view and a plan view are shown, respectively, of an embodiment of an electrostatic chuck with non-sintered aluminum nitride (AlN) according to the present invention.

[0032] In the electrostatic chuck having non-sintered aluminum nitride (AlN) according to the present invention, the coating layer of aluminum nitride can be formed by variou...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to view more

Abstract

The present invention relates to an electro-static chuck with non-sintered AlN and a method of preparing the same. Especially, the present invention relates to the electro-static chuck with non-sintered AlN which having coated aluminum nitride (AlN) layer as a dielectric one on the purpose of chucking the wafers in the process of wafers and a method of preparing the same. The electro-static chuck of the present invention has excellent dielectric characteristics, bonding strength and thermal conductivity by forming an AlN layer as a dielectric one without sintering process or bonding process with binders.

Description

technical field [0001] The present invention relates to an electrostatic chuck with non-sintered aluminum nitride (AlN) and a method for making the same, more particularly, the present invention relates to an electrostatic chuck with non-sintered aluminum nitride (AlN) and a method for making the same : The electrostatic chuck has a coating of aluminum nitride as a dielectric layer for fixing the wafer during wafer handling, the coating is formed by bonding dielectrics without sintering treatment or bonding treatment, and has good Excellent adhesive strength and thermal conductivity as well as excellent dielectric properties. Background technique [0002] Generally, in a processing chamber for etching and depositing semiconductor elements, a wafer should be firmly fixed on a chuck to ensure processing accuracy. In the case of an electrostatic chuck, the wafer is held by static electricity induced on the chuck. [0003] An electrostatic chuck is one of the components of sem...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/68C23C16/458C23C24/04H01L21/683
CPCC23C16/4586C23C24/04H01L21/6833H01L21/68
Inventor 高景现李夏勇李在洪李勳常李在丁
Owner SNT CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap