Method for measuring trace B/Si elements in uranium hexafluoride

A technology of uranium hexafluoride and a measurement method, which is applied in the field of mass spectrometry analysis, can solve the problems of large sample consumption, increased difficulty and high cost, and achieves the effects of reducing sample consumption, improving sampling method and strong applicability

Active Publication Date: 2007-02-07
中国核工业总公司五〇四厂
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Problems solved by technology

Due to the strong volatility of the boron / silicon component, the difficulty of this process is increased, and the treatment methods of the samples of the two elements are different. Therefore, the main disadvantages of this type of method are: first, the cycle is long, the sample consumption is large, High cost; second, the process quality is difficult to control; third, the representativeness of sample products is difficult to grasp and evaluate
However, to achieve it, it is necessary to study and solve a series of technical problems such as molecular form, identification and selection of spectral peaks, background interference, preparation of gas mixing standards, instrument calibration, sampling and measurement representativeness, especially for those involving UF6. For highly corrosive gaseous media, it is often more difficult to solve these technical problems

Method used

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Embodiment Construction

[0013] For different instruments, use the mixed standard configured in the experiment for one-time or periodic calibration to obtain the relative sensitivity coefficient K of boron / silicon under certain conditions 49 / K 104 .

[0014] Electron bombardment ion source, its sensitivity should be better than every 3×10 5 UF 6 Molecules collected into a UF 5 + For ions, the sampling system is equipped with a flow or pressure adjustable channel valve, and the measuring range of the measuring system should reach 10 -9 A~10 -16 A, usually realized by a Faraday cup and a secondary electron multiplier combined acceptance detection system. The ion source and sampling system are cleaned, degassed by heating and fully passivated to reduce and stabilize the background as much as possible.

[0015] ①Measurement preparation:

[0016] The instrument introduces a small amount of UF 6 Gas, find UF on Faraday cup 5 + The ion peak adjusts the instrument so that the focusing conditions a...

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Abstract

The detection method for trace B / Si element in UF6 comprises: reading the UF6 spectrum peak and impurity peak with a device; substituting data into the formula to calculate the final result, W(B) = (I48x / I333x-I48s / I333s)*K49 or W(Si) = (I104x / I333x-I104s / I333s)*K104; where, K49 / K104 for the related sensitive cofactor of the device to B / Si, I for read mass-charge ratio ion peak strength. This invention is simple and low cost.

Description

technical field [0001] The invention belongs to a mass spectrometry analysis method, in particular to a method for measuring trace boron / silicon elements in uranium hexafluoride through mass spectrometry analysis. Background technique [0002] UF6 gas is a necessary chemical form for uranium enrichment, and the main impurity elements of low-concentration enriched uranium products are boron and silicon. ASTM C996-96 (Specification for Low-enriched UF6 Products) stipulates that the limits of boron and silicon content in low-enriched UF6 are 4μg / gU and 250μg / gU respectively. been adopted. Therefore, in the production process control and product testing of enriched uranium, the analysis of boron / silicon impurity content in uranium hexafluoride is an indispensable link and a routine work. So far, its analysis method has been using the method of chemical spectroscopy at home and abroad. The main process of this type of method is to convert the UF6 sample into a hydrolysis solut...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N30/72G01N30/86
Inventor 郝学元辛有东康建有
Owner 中国核工业总公司五〇四厂
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