Optical information recording medium and method for manufacturing the same
A technology for recording media and optical information, which is applied in the manufacture of optical recording media, optical recording media, recording/reproducing with optical methods, etc. It can solve the problems of recording media loss of function, easy corrosion, low thermal conductivity, etc., and achieve good recording High regenerative characteristics and high reliability
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Embodiment approach 1
[0045] Hereinafter, embodiments of the present invention will be specifically described with reference to the drawings.
[0046] Figure 1~3 It is a partial cross-sectional view of a configuration example of the optical information recording medium of the present invention.
[0047] Such as figure 1 As shown, in the optical information recording medium of the present invention, at least a recording layer 2 , a light absorbing layer 3 , a reflective layer 4 and a protective substrate 5 are sequentially disposed on a transparent substrate 1 . Recording and reproduction are performed by condensing laser light 6 with an objective lens 7 and irradiating the optical information recording medium from the transparent substrate 1 side.
[0048] In addition, if figure 2 As shown, the lower dielectric layer 8 can also be appropriately provided between the transparent substrate 1 and the recording layer 2, the upper dielectric layer 9 can be provided between the recording layer 2 and ...
Embodiment 1
[0074] As a transparent substrate, a substrate composed of polycarbonate and having a diameter of 12 cm, a thickness of 0.6 mm, a groove pitch of 1.23 μm, and a groove depth of 55 nm was prepared. Using the sputtering method, in an Ar environment, on the surface of the transparent substrate on which the grooves are formed, the following layers are sequentially stacked: composed of (ZnS) 80 (SiO 2 ) 20 The lower side dielectric layer with a film thickness of 120nm is composed of (ZrO 2 ) 46 (Y 2 o 3 ) 4 (Cr 2 o 3 ) 50 The lower interface layer with a film thickness of 5nm is composed of Ge 40 Sb 4 Bi 4 Te 52 A recording layer with a film thickness of 8.5nm, composed of (ZrO 2 ) 46 (Y 2 o 3 ) 4 (Cr 2 o 3 ) 50 The upper interface layer with a film thickness of 5nm is composed of (ZnS) 80 (SiO 2 ) 20 The upper side dielectric layer with a film thickness of 40nm is composed of CrSi 2 A light-absorbing layer with a film thickness of 30nm, made of Ag 98 In 2...
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Abstract
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