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Manufacturing method of thin film transistor

A technology for thin film transistors and a manufacturing method, which is applied in semiconductor/solid state device manufacturing, electrical components, circuits, etc., can solve the problem of poor screen uniformity of liquid crystal display panels, poor structural strength of insulating layers and semiconductor layers, and poor electrical performance of thin film transistors. and other issues to achieve the best durability, improve durability, and improve display quality.

Inactive Publication Date: 2007-02-28
AU OPTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, since the existing manufacturing method of thin film transistors uses chemical vapor deposition to form insulating layers and semiconductor layers, no other methods are used to strengthen the structures of insulating layers and semiconductor layers.
Therefore, the electrical performance of the thin film transistor is poor, which will cause the problem of leakage current, and then cause the problem of poor picture uniformity of the liquid crystal display panel, such as the partial area under the black picture is slightly grayish white, which affects the performance of the liquid crystal display
In addition, due to the poor structural strength of the insulating layer and the semiconductor layer, the durability of the thin film transistor will be poor, and the life of the thin film transistor will be shortened.

Method used

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  • Manufacturing method of thin film transistor
  • Manufacturing method of thin film transistor
  • Manufacturing method of thin film transistor

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Embodiment Construction

[0054] 1A to 1D are cross-sectional views of a manufacturing process of a thin film transistor according to an embodiment of the present invention.

[0055] First, please refer to FIG. 1A , a substrate 100 is provided, and the substrate 100 may be a glass substrate or a quartz substrate.

[0056] Next, a gate 102 is formed on the substrate 100 . The gate 102 is formed by, for example, first forming a first conductive layer (not shown) on the substrate 100 and then patterning the first conductive layer. The first conductor layer can be formed by stacking multiple layers of metal. The material of the first conductor layer is, for example, conductive materials such as aluminum, titanium, tin, tantalum, aluminum-silicon-copper, tungsten, chromium, copper, gold or silver. The forming method is, for example, a physical vapor deposition method, such as a sputtering method.

[0057] Then, an insulating layer 104 is formed on the substrate 100 , and the insulating layer 104 covers t...

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Abstract

The invention relates to a method for producing film transistor, which comprises: forming grid on the base board, forming insulated layer on the baser board to cover the grid, forming semi-conductive layer above the insulated layer, forming source and drain above the semi-conductive layer and surface treating.

Description

technical field [0001] The invention relates to a method for manufacturing a semiconductor element, and in particular to a method for manufacturing a thin film transistor. Background technique [0002] The rapid progress in the multimedia field is mostly due to the rapid progress of semiconductor components or man-machine display devices. As far as displays are concerned, cathode ray tubes (CRT: Cathode Ray Tube) have been monopolizing the display market in recent years because of their excellent display quality and economical efficiency. [0003] From the environment of operating most terminals / display devices on the table, or from the perspective of environmental protection and energy saving, there are still many problems in the utilization of space and energy consumption of cathode ray tubes. In addition, cathode ray tubes cannot effectively provide solutions to the needs of lightness, thinness, shortness, smallness, and low power consumption. Therefore, thin film transi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/336
Inventor 李豪捷朱庆云
Owner AU OPTRONICS CORP