Inductive coupling source

An inductive coupling and inductive coupling coil technology, applied in the field of microelectronics, can solve the problems of unstable impedance matching, excessive inductance, low coupling efficiency, etc., and achieve the effects of superior performance, reduced dependence, and uniform magnetic field strength

Active Publication Date: 2007-03-28
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
View PDF0 Cites 14 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In this case, the problem faced by the traditional planar spiral coil is that the inductance is too large, and the corresponding radial plasma density non-uniformity will also increase.
Because the large inductance causes large voltage and unstable impedance matching between the coil terminals, the large volt

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Inductive coupling source
  • Inductive coupling source

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0027] The specific implementation of the inductive coupling source of the present invention will be further described in detail below in conjunction with the accompanying drawings, but it is not used to limit the protection scope of the present invention.

[0028] See Figure 2 to Figure 4. The structure of the first embodiment of the inductive coupling source of the present invention includes a pair of completely symmetrical nested inductive coupling coils 1 and an excitation source. The inductive coupling coil is an involute three-dimensional coil with multiple turns. The excitation source is a radio frequency power supply.

[0029] See Figure 5. The structure of the second embodiment of the inductive coupling source of the present invention includes an inner group of coils 2 and an outer group of coils 3 and an excitation source connected in series or connected together, wherein the inner group of coils 2, the outer group of coils 3 are each composed of a pair of completely sym...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to microelectronics technology. The invention includes inductively coupled source inductance coupling coil, coil inductance coupling is a linear three-dimensional multi-coil turns. Inductively Coupled coil symmetrical layout of a number of nested right, with the series divided into the within the coil groups and the outer coil group. The strengths and positive effect of the source inductance coupling invention is: the invention, fully three-dimensional symmetric coil structure is designed for electromagnetic fields in the reaction chamber of the internal distribution of symmetry, thereby improving the response of the plasma within the chamber evenly distributed, make the chip surface at various points of the etching rate closer. The invention of the technology programs can be well controlled from the chip to the edge of the central etching rate and uniformity even with the increasing size of the chip.

Description

technical field [0001] The invention relates to the technical field of microelectronics, in particular to an inductive coupling source used in the manufacturing process of manufacturing integrated circuits (IC) or MEMS devices. Background technique [0002] Plasma devices are widely used in fabrication processes for fabricating integrated circuits (ICs) or MEMS devices. Among them, inductively coupled plasma (ICP) is widely used in etching and other processes. Under low pressure, the reactive gas is excited by radio frequency power to generate ionization to form a plasma. The plasma contains a large number of active particles such as electrons, ions, excited atoms, molecules and free radicals. These active reactive groups and the engraved Various physical and chemical reactions occur on the surface of the corrosive material and form volatile products, thereby changing the surface properties of the material. [0003] In semiconductor processing, the process gas entering the...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H05H1/24H01F5/00H01F38/14
Inventor 宋巧丽胡谦
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap