Condensing element and solid state imaging device

A technology of solid-state imaging device and light-gathering element, which is applied in the directions of optical components, electrical components, and electric solid-state devices, etc., can solve the problems of application difficulty, reduction, and low pixel light-gathering efficiency.

Active Publication Date: 2007-03-28
PANASONIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As a result, there is a problem that the light-gathering efficiency of pixels near the periphery is lower than that of pixels near the center.
Also, because this value decreases even more with decreasing pixel size, it is very difficult to apply to optical systems with short focal lengths like compact cameras
And there is also the problem that more circuits cannot be compressed in the manufacturing process

Method used

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  • Condensing element and solid state imaging device
  • Condensing element and solid state imaging device
  • Condensing element and solid state imaging device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0192]FIG. 5 is a diagram showing a basic configuration of a solid-state imaging device according to this embodiment. Each pixel (2.8 μm in size) includes: a graded-index lens (also referred to as “aggregate of light-transmitting films”) 1, a color filter for green 2, an AL line 3, a signal transmission unit 4, and a flattening layer 5 , a light-receiving element (silicon photodiode) 6 , and a silicon substrate 7 . Fig. 6 is a plan view showing a graded-index lens.

[0193] The concentric circle structure of this graded index lens 1 comprises high refractive index material 33 [TiO 2 (n=2.53)] and low-refractive index material 34 [air (n=1.0)], and have a plurality of division areas, the width 35 of this division area is made up of adjacent 2 areas, such as this width is certain, The value is 200nm. In addition, the film thickness t was 0.5 μm.

[0194] As shown in FIG. 6 , each light-transmitting film has a band shape, a centrosymmetric shape deviated from the center, and ...

Embodiment approach 2

[0224] 12( a ) to ( c ) are photographs taken under a scanning electron microscope (SEM) of a graded-index lens having a concentric circular structure in Embodiment 2 of the present invention. This graded-index lens is formed on a fused silica substrate by drawing with an electron beam (EB: electron beam). Specifically, this graded-index lens uses a resist film (ZEP520: Refractive Index 1.56) and the refractive index difference of air. The detailed production method will be described later. The lens diameter is 2.8 μm, the lens thickness is 1 μm, and the width of the divided region is 0.2 μm. The refractive index distribution is designed according to the above formula (5), with a focal length of 5 μm, a wavelength of incident light of 0.55 μm, a refractive index of the incident side medium of 1.45 (fused silica), and a refractive index of the exit side medium of 1 (air).

[0225] Fig. 12(a) is a top view photo of a graded-index lens with an incident angle setting value of 0°...

Embodiment approach 3

[0233] 17( a ) to ( c ) are diagrams showing a basic configuration of one pixel according to Embodiment 3. FIG. The lens related to this pixel imparts the phase modulation of the above formula (4) to incident light, and has a refractive index distribution in a single Fresnel zone region. Incident light 66 is incident to the entrance window at an incident angle of 0°, and is condensed by a gradient index lens 69 for incident light at 0°; incident light 67 is incident to the entrance window at an incident angle of α / 2°, and passes through GRIN lens 70 for α / 2° incident light to condense light; and incident light 68, incident to the entrance window at an incident angle α°, and condensed by GRIN lens 71 for α° incident light ; Through the color filter 2, it is converted into an electrical signal in the light receiving part. Here, the angle α is defined by the following formula (8). Here, D is the pixel size.

[0234] [Formula 14]

[0235] α = ...

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Abstract

The present invention provides an optical device and the like which can collect incident light at a high incident angle than an existing microlens, in order to realize a solid-state imaging apparatus and the like corresponding to an optical system (an optical system with a high incident angle ) with a short focal length for a thin camera. Each unit pixel (2.8 m square in size) is made up of a distributed index lens 1, a color filter 2 for green G, Al wirings 3, a signal transmitting unit 4, planarizing films 5, a light-receiving device (Si photodiodes) 6, and a Si substrate 7. The distributed index lens 1 is made of high refractive index materials 33 [TiO 2 (n=2.53)] and low refractive index materials 34 [air (n=1.0)] having concentric zones. Further, in a distributed refractive index lens, a width 35 of adjacent divided areas is 200nm. Also, a film thickness t is 0.5 m.

Description

technical field [0001] The present invention relates to a light-condensing element and a solid-state imaging device used in digital cameras and the like. Background technique [0002] With the spread of digital cameras, camera-equipped mobile phones, and the like, the market for solid-state imaging devices has grown remarkably. In such a trend, the demand for high-sensitivity / high-pixelation of solid-state imaging devices has gradually changed. In recent years, with the thinning of digital still cameras and mobile phones, the demand for thinning of camera modules has become more intense. In other words, this means that the lens used in the camera part gradually has a short focal length, and the light incident on the solid-state imaging device has a wide angle (a large angle is measured based on the vertical axis of the incident surface of the solid-state imaging device). reason. [0003] Currently, in an image sensor such as a CCD (charge coupled device) or a CMOS (Comple...

Claims

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Application Information

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IPC IPC(8): G02B5/18G02B3/00H01L27/14G02B27/44H01L27/146
CPCH01L27/14632G02B27/4205H01L27/14625H01L27/14627G02B27/44G02B5/1876G02B5/1885H01L27/14621
Inventor 岁清公明
Owner PANASONIC CORP
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