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Decreasement for residual polymer during low-temperature nitrogen/hydrogen ashing procedure

A technology of polymers and high polymers, applied in the field of polymers, can solve problems such as ineffective removal, and achieve the effect of wide adaptability and long cleaning life

Active Publication Date: 2007-04-04
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] In order to overcome the defect that the traditional wet cleaning process cannot effectively remove the defects caused by polymers produced by DUO and other substances, and ultimately affect the performance of semiconductor devices, the present invention is proposed

Method used

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  • Decreasement for residual polymer during low-temperature nitrogen/hydrogen ashing procedure
  • Decreasement for residual polymer during low-temperature nitrogen/hydrogen ashing procedure
  • Decreasement for residual polymer during low-temperature nitrogen/hydrogen ashing procedure

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Embodiment 1

[0028] After the channel etching process is completed, the samples to be cleaned are first subjected to a nitrogen / hydrogen ashing process at room temperature to remove the polymer crust formed after etching. Among them, the ratio of nitrogen and hydrogen used in the ashing process, the power of the RF bias, and the duration of the process are adjusted according to the actual situation, that is, according to the actual polymer residue polymerization degree and hardening degree, and the DUO material The impaction method to adjust. The conditions of the ashing process in this embodiment are, N 2 / H 2 The ratio is N 2 70% and H 2 30%, RF bias 500W for 30 seconds.

[0029]Then the wet cleaning process is carried out. You can use CLK888, or AP-811 produced by ATMI as a follow-up cleaning agent, or you can use DAAF produced by Daikin, or a solution containing these components. The cleaning agent used in this embodiment is CLK888:H 2 O 2 =10:1, the cleaning temperature is 50-7...

Embodiment 2

[0032] In the 65nm back-end process, DUO193 is used as the anti-light reflection material. After the development and etching steps of the photolithography process, a layer of photoresist is formed on the surface of the semiconductor device, and DUO193 and other substances are cross-linked and polymerized to produce a polymer crust.

[0033] The samples to be cleaned are first subjected to a nitrogen / hydrogen ashing process at room temperature to remove the polymer crust formed after etching. Among them, the ratio of nitrogen and hydrogen used in the ashing process, the power of the RF bias, and the duration of the process are adjusted according to the actual situation, that is, according to the actual polymer residue polymerization degree and hardening degree, and the DUO material The impaction method to adjust. The conditions of the ashing process in this embodiment are, N 2 / H 2 The ratio is N 2 70% and H 2 30%, RF bias 500W for 30 seconds.

[0034] Then, wet cleaning i...

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Abstract

A method of utilizing low temperature nitrogen / hydrogen ashing process to reduce polymer residues includes carrying out nitrogen / hydrogen ashing process on trenches under room temperature first after trench-etching is finished and then carrying out wet cleaning process on prepared trenches fro removing off polymer residues thoroughly.

Description

technical field [0001] The present invention mainly relates to a method for removing polymers caused by photoresist and anti-light-reflection materials in the back-end process of semiconductor manufacturing process, and particularly relates to a method for reducing polymer residues by low temperature nitrogen / hydrogen ashing process. Background technique [0002] In the semiconductor manufacturing process, photoresist and anti-light reflection coatings such as DUO (produced by Honeywell Company, an inorganic anti-light reflection material) are required in the photolithography process. DUO is a siloxane-based A polymer containing suitable chromophores capable of absorbing radiation at wavelengths of 248 nm and 193 nm, manufactured by Honeywell. DUO248 and DUO193 are usually used as an inorganic anti-reflective coating material in the 90nm and 65nm back-end process (BEOL, Back End of Line). For advanced 65nm or sub-65nm semiconductor processes, applying DUO193 is a primary op...

Claims

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Application Information

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IPC IPC(8): G03F7/42G03F7/26
Inventor 杨华郑莲晃韩秋华韩蕴高昀成
Owner SEMICON MFG INT (SHANGHAI) CORP
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