Method for preparing Fe-6.5 wt% Si thin plate using continuous magnetic control sputtering physical gas phase depositing

An fe-6.5wt%si, physical vapor deposition technology, applied in the direction of sputtering plating, ion implantation plating, coating, etc., can solve the problems of reduced magnetic properties, low equipment life, poor surface quality, etc., and achieve surface Good quality, good environmental protection, and controllable ingredients

Inactive Publication Date: 2007-04-11
BEIHANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The Fe-6.5wt%Si thin plate prepared by chemical vapor deposition method has the characteristics of low cost, thickness up to 0.10mm, suitable for mass production, etc., but there are also poor surface quality, easy introduction of impurities to reduce magnetic properties, and low equipment life , the need for environmental protection and other issues

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0041] Embodiment 1 Magnetron sputtering vapor deposition single-sided siliconization

[0042] Step 1: Select a low-silicon steel strip with a width of 200mm, a thickness of 0.35mm, and a Si content of 3.1wt% as the substrate, first wash it with 4% dilute hydrochloric acid for 10 minutes, then wash it with 75% alcohol for 5 minutes, and dry it stand-by;

[0043] Step 2: Select polysilicon Si target

[0044] Select 200mm×100mm×3mm polysilicon Si for use;

[0045] Step 3: install the low-silicon steel strip processed in step 1 on the anode plate of the magnetron sputtering apparatus; then put the polysilicon Si target processed in step 2 into the magnetron sputtering apparatus as the cathode;

[0046] Vacuum to 10 -3 After Pa, feed argon to stabilize the pressure in the magnetron sputtering apparatus at 1Pa;

[0047] Adjust magnetron sputtering co-deposition conditions:

[0048] Preheat the low-silicon steel strip to 800°C;

[0049] Discharge voltage 320V, current 0.3A, de...

Embodiment 2

[0053] Example 2 Magnetron sputtering vapor deposition single-sided siliconization

[0054] Step 1: Select a low-silicon steel strip with a width of 200mm, a thickness of 0.35mm, and a Si content of 2.8wt% as the substrate, first wash it with 4% dilute hydrochloric acid for 10 minutes, then wash it with 75% alcohol for 5 minutes, and dry it stand-by;

[0055] Step 2: Select single crystal silicon Si target

[0056] Select 200mm×100mm×3mm monocrystalline silicon Si for use;

[0057] Step 3: Install the low-silicon steel strip processed in step 1 on the anode plate of the magnetron sputtering apparatus; then put the single crystal silicon Si target processed in step 2 into the magnetron sputtering apparatus as the cathode ;

[0058] Vacuum to 10 -2 After Pa, feed argon to make the pressure in the magnetron sputtering apparatus stable at 2Pa;

[0059] Adjust magnetron sputtering co-deposition conditions:

[0060] Preheat the low-silicon steel strip to 650°C;

[0061] Disch...

Embodiment 3

[0065] Embodiment 3 Magnetron sputtering vapor deposition double-sided siliconizing

[0066] Step 1: Select a low-silicon steel strip with a width of 200mm, a thickness of 0.35mm, and a Si content of 3.1wt% as the substrate, first wash it with 4% dilute hydrochloric acid for 10 minutes, then wash it with 75% alcohol for 5 minutes, and dry it stand-by;

[0067] Step 2: Select polysilicon Si target

[0068] Select two pieces of 200mm×100mm×3mm polysilicon Si for use;

[0069] Step 3: Install the low-silicon steel strip processed in step 1 on the anode plate of the magnetron sputtering apparatus; then put the polysilicon Si target processed in step 2 into two targets in the magnetron sputtering apparatus On the stage, as the cathode;

[0070] Vacuum to 10 -3 After Pa, feed argon to stabilize the pressure in the magnetron sputtering apparatus at 1Pa;

[0071] Adjust magnetron sputtering co-deposition conditions:

[0072] Preheat the low-silicon steel strip to 800°C;

[0073...

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Abstract

The continuous magnetically controlled sputtering and physically vapor depositing process of preparing Fe-6.5 wt%Si sheet includes the first sputtering with monocrystalline or polycrystalline silicon as the cathode target and low silicon steel strap as the anode to deposit silicon substance on single or double sides of the steel strap, and the subsequent high temperature inward diffusing of silicon atoms until reaching the total silicon content of 6.5 wt % and obtaining high silicon steel strap with excellent soft magnetic performance. The present invention has high work efficiency, easy control of the technological parameters and high product quality, and is suitable for industrial application.

Description

technical field [0001] The invention relates to a method for preparing Fe-Si thin plate, more particularly, refers to a method for preparing high-quality Fe-6.5wt% Si thin plate by continuous magnetron sputtering physical vapor deposition method. Background technique [0002] At present, the Fe-6.5wt% Si thin plate is basically prepared by chemical vapor deposition and rolling in the world. The chemical vapor deposition method is to introduce silane gas in a vacuum chamber, decompose the silane gas by heating, and deposit a certain amount of silicon on the silicon steel plate that has been properly pretreated; and then obtain a uniform Fe-6.5wt% by heat treatment. Si sheet. The rolling method is to directly perform hot and cold rolling on the Fe-6.5wt% Si ingot for multiple times to obtain a thin plate with a required thickness. Due to the brittleness of Fe-6.5wt% Si itself and the limitations of the rolling process, the thickness of the Fe-6.5wt% Si sheet prepared by the ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/14C23C14/54
Inventor 毕晓昉田广科
Owner BEIHANG UNIV
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