Ultrathin copper foil with carrier and printed circuit board
A technology of ultra-thin copper foil and carrier foil, which is applied in the direction of circuit substrate materials, printed circuit components, and secondary processing of printed circuits, etc. It can solve problems such as blistering, uneven peeling, and adverse effects on the human body, and achieve manufacturing quality stable effect
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Embodiment 1
[0094] Carrier foil→Mo-Co (peeling layer)→Manufacture of ultra-thin copper foil with carrier using copper plating (ultra-thin copper foil)
[0095] Using copper foil (thickness: 31 μm) whose Rz of one side is 0.8 μm as a carrier foil, a peeling layer was formed by Mo—Co plating under the following conditions.
[0096] Co content: 4.0g / dm 3
[0097] Mo content: 2.0g / dm 3
[0098] Citric acid: 80g / dm 3
[0099] Current density: 2A / dm 2
[0100] Power on time: 15 seconds
[0101] Bath temperature: 50°C
[0102] The adhesion amount of the formed peeling layer is 1.5mg / dm 2 , the composition ratio is Mo / (Mo+Co)×100=31.
[0103] Electroplate copper with a thickness of 0.2 μm on the formed peeling layer under , and then electroplate it with at 4.5A / dm 2 Electroplate copper at a current density of 3 μm to form an ultra-thin copper foil with a carrier.
[0104] Next, in Ni: 0.5mg / dm 2 , Zn: 0.05mg / dm 2 , Cr: 0.3mg / dm 2 After the surface treatment, the silane coupling ag...
Embodiment 2
[0106] Carrier foil → Mo-Ni (peeling layer) → Manufacture of ultra-thin copper foil with carrier using copper plating (thin copper foil)
[0107] The copper foil (thickness: 31 micrometers) whose Rz of one side is 0.85 micrometers was used as carrier foil, and Mo-Ni plating was produced under the following conditions.
[0108] Nickel sulfate hexahydrate: 50g / dm 3
[0109] Sodium molybdate dihydrate: 60g / dm 3
[0110] Sodium citrate: 90g / dm 3
[0111] Bath temperature: 30°C
[0112] Current density: 3A / dm 2
[0113] Power on time: 20 seconds
[0114] The adhesion amount of the formed peeling layer is 2.4mg / dm 2 , the composition ratio is Mo / (Mo+Ni)×100=29.
[0115] Next, form a 0.2 μm thick copper plating layer on the peeling layer with , and then use at a current density of 4.5A / dm 2 The electroplating forms a copper plating layer, forming an ultra-thin copper foil with a thickness of 3 μm, and making an ultra-thin copper foil with a carrier.
[0116] Next, in Ni:...
Embodiment 3
[0118] Carrier foil → W-Ni (peeling layer) → Manufacture of ultra-thin copper foil with carrier using copper plating (ultra-thin copper foil)
[0119] The copper foil (thickness: 31 micrometers) whose Rz of one side is 0.82 micrometers was used as carrier copper foil, and W-Ni plating was produced under the following conditions.
[0120] Nickel sulfate hexahydrate: 50g / dm 3
[0121] Sodium tungstate dihydrate: 60g / dm 3
[0122] Sodium citrate: 90g / dm 3
[0123] Bath temperature: 70°C
[0124] Current density: 2.5A / dm 2
[0125] Power-on time: 18 seconds
[0126] The adhesion amount of the formed peeling layer is 1mg / dm 2 , the composition ratio is W / (W+Ni)×100=20.
[0127] Next, after forming a copper plating layer with a thickness of 0.2 μm by the above-mentioned on the formed peeling layer, and then by at 3.5A / dm 2 Electroplating at a current density of 3 μm to form an ultra-thin copper foil with a carrier.
[0128] Next, in Ni: 0.5mg / dm 2 , Zn: 0.05mg / dm 2 ,...
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