A copper-gas media Damascus structure and its making method

A technology of gas medium and manufacturing method, which is applied in semiconductor/solid-state device manufacturing, electrical components, electrical solid-state devices, etc., can solve the problems of low manufacturing cost, and achieve the effects of being beneficial to heat conduction, structural stability, and reducing interconnection delay.

Active Publication Date: 2011-04-06
SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT +2
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  • Abstract
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Problems solved by technology

[0018] However, how to implement the copper-gas dielectric system damascene process in large-scale production is the biggest problem encountered by the industry. The difficulty lies in: on the one hand, it is necessary to ensure that the integrated copper-gas dielectric damascene has a stable structure and a uniform dielectric constant. K≈1 and good thermal conductivity; on the other hand, the process should be easy to realize on the production line, and the manufacturing cost should be as low as possible

Method used

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  • A copper-gas media Damascus structure and its making method
  • A copper-gas media Damascus structure and its making method
  • A copper-gas media Damascus structure and its making method

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Embodiment Construction

[0057] The specific embodiments of the present invention will now be described in further detail with reference to the accompanying drawings:

[0058] The copper-gas medium multilayer Damascus structure of the present invention is as Picture 9 Shown ( Picture 9 It is a schematic diagram of the copper-gas medium Damascus structure of the present invention), and there is a dielectric layer 1 at the bottom of the entire structure. In each layer of the multi-layer Damascus structure of the Damascus structure, the diffusion barrier layer and the copper seed layer 8 are lined at the bottom and around the copper wiring 2, and the copper seed layer between the diffusion barrier layer and the copper seed layer 8 The liner is at the bottom and around the copper wiring 2, the diffusion barrier layer is lined at the bottom and around the copper seed layer; the oxide film 5 is wrapped around the diffusion barrier layer, and the silicon carbide etching barrier layer 11 covers the package T...

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Abstract

This invention relates to one copper to gas medium Damascus structure, which comprises the following process steps: firstly depositing evaporating organic materials layer between etch block layer and etching and depositing oxidation film; then processing Damascus copper on the film; then removing the organic materials layer and filling with nitrogen gas to fulfill the structure process to form the structure by use of evaporating organic materials.

Description

Technical field [0001] The invention belongs to the art field of integrated circuit manufacturing, and specifically relates to a manufacturing method using copper Damascus technology in integrated circuit production. Background technique [0002] With the continuous progress of integrated circuit manufacturing technology, the volume of semiconductor devices is becoming smaller and smaller, and it is more difficult to connect them. In the past 30 years, the semiconductor industry has used aluminum as the material for connecting devices, but with the shrinking of chips, the industry needs thinner and thinner connections, and the high resistance characteristics of aluminum have become increasingly difficult to meet demand. Moreover, in the case of high-density very large-scale integrated circuits, high resistance is likely to cause electronic "jumping", leading to wrong switching states of nearby devices. In other words, chips using aluminum as wires may produce operating conditio...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/522H01L21/768
Inventor 缪炳有方精询朱骏
Owner SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT
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