Laser processing apparatus
a technology of laser processing and processing equipment, which is applied in the direction of manufacturing tools, semiconductor/solid-state device testing/measurement, semiconductor/solid-state device details, etc., can solve the problems of prolonging processing time, unable to properly form through-grooves along all division lines, and inability to properly form through-grooves
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embodiment 1
[0035]A laser processing apparatus according to Embodiment 1 will be described. FIG. 1 is a perspective view depicting schematically a configuration example of the laser processing apparatus according to Embodiment 1. FIG. 2A is a perspective view of a wafer constituting a packaged wafer as an object to be processed by the laser processing apparatus according to Embodiment 1. FIG. 2B is a perspective view of a device of the wafer depicted in FIG. 2A. FIG. 3 is a sectional view of a major part of the packaged wafer as the object to be processed by the laser processing apparatus according to Embodiment 1. FIG. 4 is a perspective view depicting a packaged device chip obtained by dividing the packaged wafer depicted in FIG. 3.
[0036]The laser processing apparatus 1 depicted in FIG. 1 according to Embodiment 1 is an apparatus for applying ablation to division lines 202 of a packaged wafer 201 depicted in FIG. 3 as a workpiece, thereby dividing the packaged wafer 201 into packaged device c...
embodiment 2
[0085]A laser processing apparatus according to Embodiment 2 will be described. FIG. 19 is a perspective view of a wafer as an object to be processed by the laser processing apparatus according to Embodiment 2. In FIG. 19, the same sections as those in Embodiment 1 above are denoted by the same reference symbols as used above, and descriptions thereof are omitted.
[0086]The laser processing apparatus 1 according to Embodiment 2, for which an object to be processed is the wafer 204 as the workpiece depicted in FIG. 19, is the same as that in Embodiment 1 in the configuration of the apparatus itself. In a laser processing method using the laser processing apparatus 1 according to Embodiment 2, the wafer 204 is one formed with a low-dielectric-constant insulating material film (low-k film) on a front surface 209 thereof, or one in which the devices 206 are each an imaging element such as complementary metal-oxide-semiconductor (CMOS). The low-dielectric-constant insulating material film...
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Abstract
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